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1. (WO2019041811) MINIATURE LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREFOR
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Pub. No.: WO/2019/041811 International Application No.: PCT/CN2018/081667
Publication Date: 07.03.2019 International Filing Date: 03.04.2018
IPC:
H01L 33/36 (2010.01) ,H01L 33/12 (2010.01) ,H01L 33/00 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
12
with a stress relaxation structure, e.g. buffer layer
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Applicants:
厦门三安光电有限公司 XIAMEN SAN'AN OPTOELECTRONICS CO., LTD. [CN/CN]; 中国福建省厦门市 同安区洪塘镇民安大道841-899号 No.841-899, Min An Road, Hongtang Town, Tongan District Xiamen, Fujian 361100, CN
Inventors:
盛翠翠 SHENG, Cuicui; CN
黄俊凯 HUANG, Chun Kai; CN
吴俊毅 WU, Chun-Yi; CN
Priority Data:
201710763086.730.08.2017CN
Title (EN) MINIATURE LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREFOR
(FR) DIODE ÉLECTROLUMINESCENTE MINIATURE ET SON PROCÉDÉ DE FABRICATION
(ZH) 微型发光二极管及其制作方法
Abstract:
(EN) Provided are a miniature light-emitting diode and a manufacturing method therefor. The miniature light-emitting diode comprises an epitaxial laminated layer, wherein the epitaxial laminated layer successively includes a support layer (313), a first type of semiconductor layers (311, 321, 322), an active layer (323), and a second type of semiconductor layer (324, 325), wherein the support layer (313) has sufficient thickness so as to provide certain physical strength. Provided are an epitaxial structure and a chip structure of a miniature light-emitting diode with a horizontal structure. A P electrode (332) and an N electrode (331) of a chip are located at the same side, and light is emitted from reverse surfaces of the P electrode (332) surface and the N electrode (331) surface, so that the chip brightness is promoted; and the horizontal structure is suitable for packaging modes of more LED chips, so that the packaging efficiency is improved and the packaging productivity is promoted.
(FR) La présente invention concerne une diode électroluminescente miniature et son procédé de fabrication. La diode électroluminescente miniature comprend une couche stratifiée épitaxiale, la couche stratifiée épitaxiale comprenant successivement une couche de support (313), un premier type de couches semi-conductrices (311, 321, 322), une couche active (323) et un second type de couche semi-conductrice (324, 325), la couche de support (313) ayant une épaisseur suffisante pour fournir une certaine résistance physique. L'invention concerne une structure épitaxiale et une structure de puce d'une diode électroluminescente miniature ayant une structure horizontale. Une électrode P (332) et une électrode N (331) d'une puce sont situées du même côté, et de la lumière est émise à partir de surfaces inverses de la surface d'électrode P (332) et de la surface d'électrode N (331), de telle sorte que la luminosité de puce est favorisée ; et la structure horizontale est appropriée pour encapsuler des modes de davantage de puces de DEL, de telle sorte que l'efficacité d'encapsulation est améliorée et la productivité d'encapsulation est favorisée.
(ZH) 提供一种微型发光二极管及其制作方法,该微型发光二极管包括外延叠层,其依次包含支撑层(313)、第一类型半导体层(311,321,322)、有源层(323)、第二类型半导体层(324,325),支撑层(313)具有足够的厚度以提供一定的物理强度。提供一种水平结构的微型发光二极管的外延结构及芯片结构,芯片P电极(332)和N电极(331)在同一侧,光从P电极(332)面和N电极(331)面的反面发出,提升了芯片亮度,水平结构适用于更多LED芯片的封装方式,提高了封装效率,提升封装产能。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)