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1. (WO2019041630) MANUFACTURING METHOD AND DEVICE FOR ARRAY SUBSTRATE
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Pub. No.: WO/2019/041630 International Application No.: PCT/CN2017/115861
Publication Date: 07.03.2019 International Filing Date: 13.12.2017
IPC:
H01L 21/84 (2006.01) ,H01L 21/28 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
84
the substrate being other than a semiconductor body, e.g. being an insulating body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
Applicants:
惠科股份有限公司 HKC CORPORATION LIMITED [CN/CN]; 中国广东省深圳市 宝安区石岩街道水田村民营工业园惠科工业园厂房1、2、3栋,九州阳光1号厂房5、7楼 5th and 7th Floor of Factory Building 1, Jiuzhou Yangguang Factory Buildings 1, 2, 3 of HKC Industrial Park Privately Operated Industrial Park, Shuitian Village, Shiyan Sub-district, Baoan District Shenzhen, Guangdong 518108, CN
Inventors:
何怀亮 HE, Huailiang; CN
Agent:
北京国昊天诚知识产权代理有限公司 CO-HORIZON INTELLECTUAL PROPERTY INC.; 中国北京市 朝阳区小关北里甲2号渔阳置业大厦B座605 Suite 605, B Block, Yuyang Zhiye Building No. A2, Xiaoguanbeili, Chaoyang District Beijing 100029, CN
Priority Data:
201710757117.829.08.2017CN
Title (EN) MANUFACTURING METHOD AND DEVICE FOR ARRAY SUBSTRATE
(FR) PROCÉDÉ ET DISPOSITIF DE FABRICATION DE SUBSTRAT DE MATRICE
(ZH) 阵列基板的制作方法及其制作设备
Abstract:
(EN) A manufacturing method and device for an array substrate. The manufacturing method comprises: forming an active switch on a substrate (1); forming a transparent electrode layer (17) on the active switch; and forming a pixel layer on the transparent electrode layer (17). The method of forming an active switch on a substrate (1) comprises: forming a metal layer (11, 14) on the substrate; bombarding the metal layer (11, 14) with hydrogen ions; and forming a protective layer (12, 15) on the metal layer (11, 14).
(FR) L’invention concerne un procédé et un dispositif de fabrication d’un substrat de matrice. Le procédé de fabrication consiste : à former un commutateur actif sur un substrat (1) ; à former une couche d’électrode transparente (17) sur le commutateur actif ; et à former une couche de pixels sur la couche d’électrode transparente (17). Le procédé de formation d’un commutateur actif sur un substrat (1) consiste : à former une couche de métal (11, 14) sur le substrat ; à bombarder la couche de métal (11, 14) avec des ions hydrogène ; et à former une couche protectrice (12, 15) sur la couche de métal (11, 14).
(ZH) 一种阵列基板的制作方法及其制作设备,所述制作方法包括:在基板(1)上形成主动开关;在所述主动开关上形成透明电极层(17);在所述透明电极层(17)上形成像素层;所述在基板(1)上形成主动开关的方法包括:在基板上形成金属层(11、14);采用氢离子轰击所述金属层(11、14);以及在所述金属层(11、14)上形成保护层(12、15)。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)