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1. (WO2019041554) METHOD FOR MANUFACTURING AMOLED SUBSTRATE AND AMOLED SUBSTRATE
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Pub. No.: WO/2019/041554 International Application No.: PCT/CN2017/109832
Publication Date: 07.03.2019 International Filing Date: 08.11.2017
IPC:
H01L 21/77 (2017.01) ,H01L 27/12 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12
the substrate being other than a semiconductor body, e.g. an insulating body
Applicants:
武汉华星光电半导体显示技术有限公司 WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. [CN/CN]; 中国湖北省武汉市 东湖新技术开发区高新大道666号光谷生物创新园C5栋305室 305 Room, Building C5 Biolake of Optics Valley, No.666 Gaoxin Avenue, Wuhan East Lake High-tech Development Zone Wuhan, Hubei 430079, CN
Inventors:
马蹄遥 MA, Tiyao; CN
Agent:
深圳翼盛智成知识产权事务所(普通合伙) ESSEN PATENT&TRADEMARK AGENCY; 中国广东省深圳市 福田区深南大道6021号喜年中心A座1709-1711 Hailrun Complex Block A, Room 1709-1711 No.6021 Shennan Blvd, Futian District Shenzhen, Guangdong 518040, CN
Priority Data:
201710747902.528.08.2017CN
Title (EN) METHOD FOR MANUFACTURING AMOLED SUBSTRATE AND AMOLED SUBSTRATE
(FR) PROCÉDÉ DE FABRICATION D'UN SUBSTRAT AMOLED, ET SUBSTRAT AMOLED
(ZH) AMOLED基板的制作方法及AMOLED基板
Abstract:
(EN) A method for manufacturing an AMOLED substrate (1, 2) and the AMOLED substrate (1, 2). The method comprises: providing a base substrate (110, 210); coating the surface of the base substrate (110, 210) with a PI film (120, 220); and sequentially preparing an isolation layer (130, 230), a non-metal layer (140, 240), a buffer layer (150, 250), and a TFT array (160, 260) above the PI film (120, 220). The non-metal layer (140, 240) provided above the PI film (120, 220) is used for absorbing laser penetrating through the buffer layer (150, 250) during preparation of the TFT array (160, 260).
(FR) L'invention concerne un procédé de fabrication d'un substrat AMOLED (1, 2) et le substrat AMOLED (1, 2) obtenu. Le procédé comprend : la mise en place d'un substrat de base (110, 210); le revêtement de la surface du substrat de base (110, 210) avec un film PI (120, 220); et l'installation séquentielle d'une couche d'isolation (130, 230), d'une couche non métallique (140, 240), d'une couche tampon (150, 250), et d'un réseau TFT (160, 260) au-dessus du film PI (120, 220). La couche non métallique (140, 240) disposée au-dessus du film PI (120, 220) sert à absorber le laser pénétrant la couche tampon (150, 250) pendant l'installation du réseau TFT (160, 260).
(ZH) 一种AMOLED基板(1,2)的制作方法及AMOLED基板(1,2),包括:提供一衬底基板(110,210);在衬底基板(110,210)表面涂布一层PI膜(120,220);在PI膜(120,220)上方依次制备隔离层(130,230)、非金属层(140,240)、缓冲层(150,250)和TFT阵列(160,260);其中,设置于PI膜(120,220)上方的非金属层(140,240)用于吸收TFT阵列(160,260)的制备过程中穿透缓冲层(150,250)的激光。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)