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1. (WO2019041553) VERTICAL CHANNEL ORGANIC THIN FILM TRANSISTOR FOR PIXEL STRUCTURE AND PREPARATION METHOD THEREFOR
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Pub. No.: WO/2019/041553 International Application No.: PCT/CN2017/109829
Publication Date: 07.03.2019 International Filing Date: 08.11.2017
IPC:
H01L 29/786 (2006.01) ,H01L 51/05 (2006.01) ,H01L 51/40 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
40
Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants:
深圳市华星光电技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN/CN]; 中国广东省深圳市 光明新区塘明大道9-2号 No., 9-2, Tangming Rd, Guangming New District Shenzhen, Guangdong 518132, CN
Inventors:
李子然 LI, Ziran; CN
Agent:
深圳翼盛智成知识产权事务所(普通合伙) ESSEN PATENT&TRADEMARK AGENCY; 中国广东省深圳市 福田区深南大道6021号喜年中心A座1709-1711 Hailrun Complex Block A Room 1709-1711 No. 6021, Shennan Blvd,Futian District ShenZhen, Guangdong 518040, CN
Priority Data:
201710779318.801.09.2017CN
Title (EN) VERTICAL CHANNEL ORGANIC THIN FILM TRANSISTOR FOR PIXEL STRUCTURE AND PREPARATION METHOD THEREFOR
(FR) TRANSISTOR À COUCHE MINCE ORGANIQUE À CANAL VERTICAL POUR STRUCTURE DE PIXELS ET SON PROCÉDÉ DE PRÉPARATION
(ZH) 像素结构垂直沟道有机薄膜晶体管及其制作方法
Abstract:
(EN) A vertical channel organic thin film transistor for a pixel structure and a preparation method therefor. The transistor comprises a first electrode layer distributed on an upper surface of a substrate (1). The first electrode layer comprises a common electrode layer (21) and a source layer (22), and a second electrode layer disposed on the upper surface of the substrate (1). The second electrode layer comprises a pixel electrode layer (41) and a drain layer (42). An insulating layer is provided between the first electrode layer and the substrate (1). The pixel electrode layer (41) and an upper portion of the insulating layer are distributed with channels (6) perpendicular to the insulating layer, and the channels (6) divide the pixel electrode layer (41) into a plurality of mutually separated solid pixel electrodes. The pixel electrode layer (41) is connected to a drain layer (42) of the organic thin film transistor. An active layer (51) is deposited on the drain layer (42) and the source layer (22), and a gate layer (53) as well as a gate insulating layer (52) between the active layer (51) and the gate layer (53) are respectively deposited on the active layer (51).
(FR) L’invention concerne un transistor à couche mince organique à canal vertical pour une structure de pixels et son procédé de préparation. Le transistor comprend une première couche d’électrode distribuée sur une surface supérieure d’un substrat (1). La première couche d’électrode comprend une couche d’électrode commune (21) et une couche de source (22), et une deuxième couche d’électrode disposée sur la surface supérieure du substrat (1). La deuxième couche d’électrode comprend une couche d’électrode de pixels (41) et une couche de drain (42). Une couche isolante est disposée entre la première couche d’électrode et le substrat (1). La couche d’électrode de pixels (41) et une partie supérieure de la couche isolante sont réparties avec des canaux (6) perpendiculaires à la couche isolante, et les canaux (6) divisent la couche d’électrode de pixels (41) en une pluralité d’électrodes de pixels solides mutuellement séparées. La couche d’électrode de pixels (41) est connectée à une couche de drain (42) du transistor à couche mince organique. Une couche active (51) est déposée sur la couche de drain (42) et sur la couche de source (22), et une couche de grille (53) ainsi qu’une couche isolante de grille (52) entre la couche active (51) et la couche de grille (53) sont déposées respectivement sur la couche active (51).
(ZH) 一种像素结构垂直沟道有机薄膜晶体管及其制备方法,包括分布于基板(1)的上表面的第一电极层,该第一电极层包括公共电极层(21)和源极层(22)以及设于基板(1)的上表面上方第二电极层,该第二电极层包括的像素电极层(41)和漏极层(42);第一电极层和基板(1)之间设有绝缘层;像素电极层(41)和绝缘层的上部分布有垂直于绝缘层的沟道(6),沟道(6)将像素电极层(41)分成多个相互隔离的立体像素电极;像素电极层(41)连接于有机薄膜晶体管的漏极层(42),漏极层(42)、源极层(22)上沉积有有源层(51),有源层(51)上分别沉积有栅极层(53)以及位于有源层(51)和栅极层(53)之间的栅绝缘层(52)。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)