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1. (WO2019041468) SCHOTTKY BASE STRUCTURE, SCHOTTKY DIODE AND MANUFACTURING METHOD THEREFOR
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/041468 International Application No.: PCT/CN2017/106277
Publication Date: 07.03.2019 International Filing Date: 16.10.2017
IPC:
H01L 29/872 (2006.01) ,H01L 29/06 (2006.01) ,H01L 21/329 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
872
Schottky diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
328
Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors
329
the devices comprising one or two electrodes, e.g. diodes
Applicants:
江苏能华微电子科技发展有限公司 JIANGSU CORENERGY SEMICONDUCTOR CO., LTD. [CN/CN]; 中国江苏省苏州市 张家港市国泰北路1号科技创业园E-203 E-203, Science And Technology Venture Park No.1 Guotai North Road, Zhangjiagang Suzhou, Jiangsu 215600, CN
Inventors:
朱廷刚 ZHU, Tinggang; CN
张葶葶 ZHANG, Tingting; CN
李亦衡 LI, Yiheng; CN
Agent:
苏州创元专利商标事务所有限公司 SUZHOU CREATOR PATENT AND TRADEMARK AGENCY CO., LTD; 中国江苏省苏州市 干将西路93号 No.93 Ganjiang West Road Suzhou, Jiangsu 215002, CN
Priority Data:
201710749630.228.08.2017CN
Title (EN) SCHOTTKY BASE STRUCTURE, SCHOTTKY DIODE AND MANUFACTURING METHOD THEREFOR
(FR) STRUCTURE DE BASE SCHOTTKY, DIODE SCHOTTKY ET PROCÉDÉ DE FABRICATION ASSOCIÉ
(ZH) 一种肖特基极结构、肖特基二极管及制造方法
Abstract:
(EN) The present application provides a schottky base structure. The cathode structure comprises: an N-type semiconductor layer, a first P-type semiconductor layer covering the N-type semiconductor layer, and a first N-type semiconductor layer or semi-insulating-type semiconductor layer covering the first P-type semiconductor layer. By means of the schottky base structure provided by embodiments of the present application, a reverse voltage withstand value of a diode can be improved effectively, and reliability of the diode is effectively improved.
(FR) La présente invention concerne une structure de base Schottky. La structure de cathode comprend : une couche semi-conductrice du type N, une première couche semi-conductrice du type P recouvrant la couche semi-conductrice du type N, et une première couche semi-conductrice du type N ou du type semi-isolant recouvrant la première couche semi-conductrice du type P. Au moyen de la structure de base Schottky fournie par les modes de réalisation de la présente invention, une valeur de tenue en tension inverse ainsi que la fiabilité d'une diode peuvent être efficacement améliorées.
(ZH) 本申请提供一种肖特基极结构,所述阴极结构包括:N型半导体层;第一P型半导体层,覆盖于所述N型半导体层上;第一N型半导体层或半绝缘型半导体层,覆盖于所述第一P型半导体层上。利用本申请各实施例所述的肖特基极结构,可以有效提高二极管的反向耐压值,有效提高了二极管的可靠性。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)