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1. (WO2019039355) COMPOSITION FOR FORMING RESIST UNDERLAYER FILM
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/039355 International Application No.: PCT/JP2018/030292
Publication Date: 28.02.2019 International Filing Date: 14.08.2018
IPC:
G03F 7/11 (2006.01) ,G03F 7/20 (2006.01) ,H01L 21/027 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
09
characterised by structural details, e.g. supports, auxiliary layers
11
having cover layers or intermediate layers, e.g. subbing layers
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
Applicants:
日産化学株式会社 NISSAN CHEMICAL CORPORATION [JP/JP]; 東京都中央区日本橋二丁目5番1号 5-1, Nihonbashi 2-chome, Chuo-ku, Tokyo 1036119, JP
Inventors:
緒方 裕斗 OGATA, Hiroto; JP
臼井 友輝 USUI, Yuki; JP
遠藤 雅久 ENDO, Masahisa; JP
岸岡 高広 KISHIOKA, Takahiro; JP
Agent:
特許業務法人はなぶさ特許商標事務所 HANABUSA PATENT & TRADEMARK OFFICE; 東京都千代田区神田駿河台3丁目2番地 新御茶ノ水アーバントリニティ Shin-Ochanomizu Urban Trinity, 2, Kandasurugadai 3-chome, Chiyoda-ku, Tokyo 1010062, JP
Priority Data:
2017-16148024.08.2017JP
Title (EN) COMPOSITION FOR FORMING RESIST UNDERLAYER FILM
(FR) COMPOSITION PERMETTANT DE FORMER UN FILM DE SOUS-COUCHE DE RÉSINE
(JA) レジスト下層膜形成組成物
Abstract:
(EN) [Problem] To provide a novel composition for forming a resist underlayer film. [Solution] A composition for forming a resist underlayer film, which contains a copolymer having a constituent unit represented by formula (1) and a solvent. (In the formula, X represents a bivalent linear hydrocarbon group having 2 to 10 carbon atoms, wherein the bivalent linear hydrocarbon group may have at least one sulfur or oxygen atom in the main chain thereof and may have at last one hydroxy group as a substituent; R represents a linear hydrocarbon group having 1 to 10 carbon atoms; and two n's independently represent 0 or 1.)
(FR) L'invention concerne une nouvelle composition de formation d'un film de sous-couche de résine. La solution selon l'invention porte sur une composition pour la formation d'un film de sous-couche de résine qui contient un copolymère ayant une unité structurelle représentée par la formule (1), et un solvant. Dans la formule, X représente un groupe hydrocarbure linéaire bivalent ayant 2 à 10 atomes de carbone, le groupe hydrocarbure linéaire bivalent pouvant avoir au moins un atome de soufre ou d'oxygène dans sa chaîne principale et pouvant avoir au moins un groupe hydroxy en tant que substituant; R représente un groupe hydrocarbure linéaire ayant de 1 à 10 atomes de carbone; et deux n représentent indépendamment 0 ou 1.
(JA) 【課題】 新規なレジスト下層膜形成組成物を提供する。【解決手段】下記式(1)で表される構造単位を有する共重合体及び溶剤を含むレジスト下層膜形成組成物。(上記式中、Xは炭素原子数2乃至10の二価の鎖状炭化水素基を表し、該二価の鎖状炭化水素基は、主鎖に硫黄原子又は酸素原子を少なくとも1つ有していてもよく、また置換基としてヒドロキシ基を少なくとも1つ有していてもよく、Rは炭素原子数1乃至10の鎖状炭化水素基を表し、2つのnはそれぞれ0又は1を表す。)
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)