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1. (WO2019039290) ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN-FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, RESIST FILM-EQUIPPED MASK BLANK, PATTERN-FORMING METHOD FOR RESIST FILM-EQUIPPED MASK BLANK
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/039290 International Application No.: PCT/JP2018/029765
Publication Date: 28.02.2019 International Filing Date: 08.08.2018
IPC:
G03F 7/004 (2006.01) ,C07C 381/12 (2006.01) ,C07D 231/54 (2006.01) ,C07D 265/10 (2006.01) ,C07D 275/04 (2006.01) ,C07D 281/18 (2006.01) ,C07D 309/08 (2006.01) ,C07D 319/06 (2006.01) ,C07D 327/08 (2006.01) ,C07D 333/42 (2006.01) ,C07D 333/46 (2006.01) ,C07D 333/76 (2006.01) ,C07D 335/02 (2006.01) ,C07D 493/04 (2006.01) ,C07D 493/08 (2006.01) ,C08K 5/42 (2006.01) ,C08L 101/00 (2006.01) ,G03F 1/82 (2012.01) ,G03F 7/038 (2006.01) ,G03F 7/039 (2006.01) ,G03F 7/20 (2006.01) ,C09K 3/00 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
C
ACYCLIC OR CARBOCYCLIC COMPOUNDS
381
Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/-C07C337/142
12
Sulfonium compounds
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
D
HETEROCYCLIC COMPOUNDS
231
Heterocyclic compounds containing 1,2-diazole or hydrogenated 1,2-diazole rings
54
condensed with carbocyclic rings or ring systems
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
D
HETEROCYCLIC COMPOUNDS
265
Heterocyclic compounds containing six-membered rings having one nitrogen atom and one oxygen atom as the only ring hetero atoms
04
1,3-Oxazines; Hydrogenated 1,3-oxazines
06
not condensed with other rings
08
having one double bond between ring members or between a ring member and a non-ring member
10
with oxygen atoms directly attached to ring carbon atoms
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
D
HETEROCYCLIC COMPOUNDS
275
Heterocyclic compounds containing 1, 2-thiazole or hydrogenated 1,2-thiazole rings
04
condensed with carbocyclic rings or ring systems
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
D
HETEROCYCLIC COMPOUNDS
281
Heterocyclic compounds containing rings of more than six members having one nitrogen atom and one sulfur atom as the only ring hetero atoms
18
Eight-membered rings
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
D
HETEROCYCLIC COMPOUNDS
309
Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings
02
having no double bonds between ring members or between ring members and non-ring members
08
with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
D
HETEROCYCLIC COMPOUNDS
319
Heterocyclic compounds containing six-membered rings having two oxygen atoms as the only ring hetero atoms
04
1,3-Dioxanes; Hydrogenated 1,3-dioxanes
06
not condensed with other rings
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
D
HETEROCYCLIC COMPOUNDS
327
Heterocyclic compounds containing rings having oxygen and sulfur atoms as the only ring hetero atoms
02
one oxygen atom and one sulfur atom
06
Six-membered rings
08
[b, e]-condensed with two six-membered carbocyclic rings
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
D
HETEROCYCLIC COMPOUNDS
333
Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
02
not condensed with other rings
04
not substituted on the ring sulfur atom
26
with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
42
with nitro or nitroso radicals directly attached to ring carbon atoms
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
D
HETEROCYCLIC COMPOUNDS
333
Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
02
not condensed with other rings
46
substituted on the ring sulfur atom
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
D
HETEROCYCLIC COMPOUNDS
333
Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
50
condensed with carbocyclic rings or ring systems
76
Dibenzothiophenes
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
D
HETEROCYCLIC COMPOUNDS
335
Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom
02
not condensed with other rings
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
D
HETEROCYCLIC COMPOUNDS
493
Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
02
in which the condensed system contains two hetero rings
04
Ortho-condensed systems
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
D
HETEROCYCLIC COMPOUNDS
493
Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
02
in which the condensed system contains two hetero rings
08
Bridged systems
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
K
USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES AS COMPOUNDING INGREDIENTS
5
Use of organic ingredients
36
Sulfur-, selenium-, or tellurium-containing compounds
41
Compounds containing sulfur bound to oxygen
42
Sulfonic acids; Derivatives thereof
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
L
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
101
Compositions of unspecified macromolecular compounds
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
68
Preparation processes not covered by groups G03F1/20-G03F1/5096
82
Auxiliary processes, e.g. cleaning
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
038
Macromolecular compounds which are rendered insoluble or differentially wettable
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
K
MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3
Materials not provided for elsewhere
Applicants:
富士フイルム株式会社 FUJIFILM CORPORATION [JP/JP]; 東京都港区西麻布2丁目26番30号 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors:
土村 智孝 TSUCHIMURA Tomotaka; JP
八木 一成 YAGI Kazunari; JP
Agent:
中島 順子 NAKASHIMA Junko; JP
米倉 潤造 YONEKURA Junzo; JP
村上 泰規 MURAKAMI Yasunori; JP
Priority Data:
2017-16086424.08.2017JP
Title (EN) ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN-FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, RESIST FILM-EQUIPPED MASK BLANK, PATTERN-FORMING METHOD FOR RESIST FILM-EQUIPPED MASK BLANK
(FR) COMPOSITION DE RÉSINE SENSIBLE AUX RAYONS ACTINIQUES OU AU RAYONNEMENT, FILM DE RÉSERVE, PROCÉDÉ DE FORMATION DE MOTIF, PROCÉDÉ DE FABRICATION DE DISPOSITIF ÉLECTRONIQUE, DÉCOUPE DE MASQUE ÉQUIPÉE D'UN FILM DE RÉSERVE, PROCÉDÉ DE FORMATION DE MOTIF DESTINÉ À UNE DÉCOUPE DE MASQUE ÉQUIPÉE D'UN FILM DE RÉSERVE
(JA) 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法、レジスト膜付きマスクブランクス、レジスト膜付きマスクブランクスのパターン形成方法
Abstract:
(EN) Provided are: an actinic ray-sensitive or radiation-sensitive resin composition that has excellent resolution, exposure latitude, and pattern shape properties; and a resist film, a pattern-forming method, a method for producing an electronic device, a resist film-equipped mask blank, and a pattern-forming method for a resist film-equipped mask blank, which use said actinic ray-sensitive or radiation-sensitive resin composition. This actinic ray-sensitive or radiation-sensitive resin composition comprises: a compound that generates an acid represented by specific general formula (I) upon being irradiated with an actinic ray or radiation; and a resin.
(FR) L'invention concerne : une composition de résine sensible aux rayons actiniques ou au rayonnement qui présente une excellente résolution, une excellente latitude d'exposition et des propriétés de forme de motif ; un film de réserve, un procédé de formation de motif, un procédé de fabrication d'un dispositif électronique, une découpe de masque équipée d'un film de réserve, et un procédé de formation de motif destiné à une découpe de masque équipée d'un film de réserve, qui utilisent ladite composition de résine sensible aux rayons actiniques ou au rayonnement. Cette composition de résine sensible aux rayons actiniques ou au rayonnement comporte : un composé qui génère un acide représenté par la formule générale spécifique (I) lorsqu'il est exposé à un rayon actinique ou à un rayonnement ; une résine.
(JA) 解像力、露光ラチチュード、および、パターン形状特性に優れた感活性光線性又は感放射線性樹脂組成物、上記感活性光線性又は感放射線性樹脂組成物を用いたレジスト膜、パターン形成方法、電子デバイスの製造方法、レジスト膜付きマスクブランクス、及び、レジスト膜付きマスクブランクスのパターン形成方法を提供する。感活性光線性又は感放射線性樹脂組成物は、活性光線又は放射線の照射により特定の一般式(I)で表される酸を発生する化合物と、樹脂とを含有する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)