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1. (WO2019038933) GROUP 13 ELEMENT NITRIDE LAYER, FREESTANDING SUBSTRATE AND FUNCTIONAL ELEMENT
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/038933 International Application No.: PCT/JP2017/034035
Publication Date: 28.02.2019 International Filing Date: 21.09.2017
IPC:
H01L 33/16 (2010.01) ,H01L 33/32 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
16
with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
32
containing nitrogen
Applicants:
日本碍子株式会社 NGK INSULATORS, LTD. [JP/JP]; 愛知県名古屋市瑞穂区須田町2番56号 2-56, Suda-cho, Mizuho-ku, Nagoya-shi, Aichi 4678530, JP
Inventors:
平尾 崇行 HIRAO Takayuki; JP
中西 宏和 NAKANISHI Hirokazu; JP
市村 幹也 ICHIMURA Mikiya; JP
下平 孝直 SHIMODAIRA Takanao; JP
坂井 正宏 SAKAI Masahiro; JP
吉野 隆史 YOSHINO Takashi; JP
Agent:
細田 益稔 HOSODA Masutoshi; JP
青木 純雄 AOKI Sumio; JP
Priority Data:
PCT/JP2017/03037324.08.2017JP
Title (EN) GROUP 13 ELEMENT NITRIDE LAYER, FREESTANDING SUBSTRATE AND FUNCTIONAL ELEMENT
(FR) COUCHE DE NITRURE D’ÉLÉMENT DU GROUPE 13, SUBSTRAT AUTOPORTEUR ET ÉLÉMENT FONCTIONNEL
(JA) 13族元素窒化物層、自立基板および機能素子
Abstract:
(EN) [Problem] To provide a group 13 element nitride crystal layer comprising group 13 element nitride crystals selected from gallium nitride, aluminum nitride, indium nitride, or mixed crystals thereof, having an upper surface and a lower surface, and having a microstructure with which it is possible to reduce dislocation density, and reduce the variation in characteristics over the entirety of the layer. [Solution] When the upper surface 13a of the group 13 element nitride crystal layer 13 is observed by cathode luminescence, there is a linear high luminance light-emitting portion 5 and a low luminance light-emitting region 6 adjoining the high luminance light-emitting portion 5. The high luminance light-emitting region 5 includes a portion which extends along the m plane of the group 13 element nitride crystal 13.
(FR) [Problème] fournir une couche de cristal de nitrure d'élément du groupe 13 comprenant des cristaux de nitrure d'élément du groupe 13 choisis parmi le nitrure de gallium, le nitrure d'aluminium, le nitrure d'indium, ou des cristaux mixtes de ceux-ci, ayant une surface supérieure et une surface inférieure, et ayant une microstructure avec laquelle il est possible de réduire la densité de dislocation, et de réduire la variation de caractéristiques sur la totalité de la couche. [Solution] lorsque la surface supérieure 13a de la couche de cristal de nitrure d'élément du groupe 13 est observée par luminescence de cathode, il y a une partie électroluminescente à luminance élevée linéaire 5 et une région électroluminescente à faible luminance 6 adjacente à la partie électroluminescente à luminance élevée 5. La région électroluminescente à luminance élevée 5 comprend une partie qui s'étend le long du plan m du cristal de nitrure d'élément du groupe 13.
(JA) 【課題】窒化ガリウム、窒化アルミニウム、窒化インジウムまたはこれらの混晶から選択された13族元素窒化物結晶からなり、上面及び底面を有する13族元素窒化物結晶層において、転位密度を低くでき、全体にわたって特性のばらつきを少なくできるような微構造を提供する。 【解決手段】13族元素窒化物結晶層13の上面13aをカソードルミネッセンスによって観測したときに、線状の高輝度発光部5と、高輝度発光部5に隣接する低輝度発光領域6とを有する。高輝度発光部5が、13族元素窒化物結晶13のm面に沿って伸びている部分を含む。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)