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1. (WO2019035431) SEALING RESIN COMPOSITION, METHOD FOR PRODUCING SEALING RESIN COMPOSITION, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/035431 International Application No.: PCT/JP2018/030140
Publication Date: 21.02.2019 International Filing Date: 10.08.2018
IPC:
C08L 63/00 (2006.01) ,C08G 59/00 (2006.01) ,C08K 3/013 (2018.01) ,C08K 5/54 (2006.01) ,H01L 21/56 (2006.01) ,H01L 23/29 (2006.01) ,H01L 23/31 (2006.01)
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
L
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
63
Compositions of epoxy resins; Compositions of derivatives of epoxy resins
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
G
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
59
Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by reaction of epoxy polycondensates with monofunctional low-molecular-weight compounds; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
[IPC code unknown for C08K 3/013]
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
K
USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES AS COMPOUNDING INGREDIENTS
5
Use of organic ingredients
54
Silicon-containing compounds
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
56
Encapsulations, e.g. encapsulating layers, coatings
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
28
Encapsulation, e.g. encapsulating layers, coatings
29
characterised by the material
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
28
Encapsulation, e.g. encapsulating layers, coatings
31
characterised by the arrangement
Applicants:
日立化成株式会社 HITACHI CHEMICAL COMPANY, LTD. [JP/JP]; 東京都千代田区丸の内一丁目9番2号 9-2, Marunouchi 1-chome, Chiyoda-ku, Tokyo 1006606, JP
Inventors:
水島 彩 MIZUSHIMA, Aya; JP
中田 貴広 NAKADA, Takahiro; JP
湧口 恵太 YUGUCHI, Keita; JP
Agent:
特許業務法人太陽国際特許事務所 TAIYO, NAKAJIMA & KATO; 東京都新宿区新宿4丁目3番17号 3-17, Shinjuku 4-chome, Shinjuku-ku, Tokyo 1600022, JP
Priority Data:
2017-15644114.08.2017JP
2017-15644214.08.2017JP
2017-15644314.08.2017JP
Title (EN) SEALING RESIN COMPOSITION, METHOD FOR PRODUCING SEALING RESIN COMPOSITION, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
(FR) COMPOSITION DE RÉSINE POUR SCELLEMENT AINSI QUE PROCÉDÉ DE FABRICATION DE CELLE-CI, ET DISPOSITIF À SEMI-CONDUCTEURS AINSI QUE PROCÉDÉ DE FABRICATION DE CELUI-CI
(JA) 封止用樹脂組成物、封止用樹脂組成物の製造方法、半導体装置及び半導体装置の製造方法
Abstract:
(EN) This sealing resin composition satisfies at least any of conditions (1)-(3) below: condition (1) an epoxy resin and an inorganic filler material are included, and the specific surface area of the inorganic filler material is not more than 3.28 m2/g; condition (2) an epoxy resin, an inorganic filler material, and a silane coupling agent including –NH2 or –SH are included; and condition (3) an epoxy resin and an inorganic filler material are included, and the crosslink density in a cured state is either 0.9 mol/cm3 or lower, or 1.0 mol/cm3 or higher.
(FR) L'invention concerne une composition de résine pour scellement qui satisfait au moins l'un des points (1) à (3) suivants. (1) Comprendre une résine époxy et un matériau de charge inorganique, la surface spécifique dudit matériau de charge inorganique étant inférieure ou égale à 3,28m/g. (2) Comprendre une résine époxy, un matériau de charge inorganique, et un agent adhésif au silane possédant -NH ou -SH. (3) Comprendre une résine époxy et un matériau de charge inorganique, la densité de réticulation à l'état durci étant inférieure ou égale à 0,9mol/cm et supérieure ou égale à 1,0mol/cm.
(JA) 下記(1)~(3)の少なくともいずれかを満たす、封止用樹脂組成物。 (1)エポキシ樹脂と、無機充填材とを含有し、前記無機充填材の比表面積が3.28m/g以下である。 (2)エポキシ樹脂と、無機充填材と、-NH又は-SHを有するシランカップリング剤とを含有する。 (3)エポキシ樹脂と、無機充填材とを含有し、硬化した状態での架橋密度が0.9mol/cm以下又は1.0mol/cm以上である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)