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1. (WO2019032457) METHODS AND APPARATUS FOR DEPOSITION OF LOW-K FILMS
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/032457 International Application No.: PCT/US2018/045386
Publication Date: 14.02.2019 International Filing Date: 06.08.2018
IPC:
H01L 21/02 (2006.01) ,H01L 21/324 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324
Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Applicants:
APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, California 95054, US
Inventors:
BHUYAN, Bhaskar Jyoti; US
SALY, Mark; US
SUN, Zhelin; US
LI, Ning; US
BALSEANU, Mihaela; US
XIA, Li-Qun; US
LIU, Yijun; US
YANG, Lin; US
Agent:
BLANKMAN, Jeffrey I.; US
Priority Data:
62/542,74608.08.2017US
Title (EN) METHODS AND APPARATUS FOR DEPOSITION OF LOW-K FILMS
(FR) PROCÉDÉS ET APPAREILS DE DÉPÔT DE FILMS À FAIBLE CONSTANTE DIÉLECTRIQUE
Abstract:
(EN) Methods and apparatus for forming a conformal SiCON film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a low temperature steam annealing process to form a film resistant to damage by rapid thermal processing or ashing. The film is treated by rapid thermal processing and then subjected to a high temperature anneal to form a film with a low dielectric constant.
(FR) Cette invention concerne des procédés et des appareils de formation d'un film enrobant de SiCON sur une surface. Un film de SiCN est formé sur une surface de substrat et exposé à un traitement de recuit à la vapeur à basse température pour former un film résistant à l'endommagement par traitement thermique rapide ou calcination. Le film est traité par traitement thermique rapide puis soumis à un recuit à haute température pour former un film ayant une faible constante diélectrique.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)