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1. (WO2019032414) NUISANCE REDUCTION USING LOCATION-BASED ATTRIBUTES
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/032414 International Application No.: PCT/US2018/045304
Publication Date: 14.02.2019 International Filing Date: 06.08.2018
IPC:
G06T 7/00 (2006.01) ,H01L 21/66 (2006.01)
G PHYSICS
06
COMPUTING; CALCULATING; COUNTING
T
IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
7
Image analysis, e.g. from bit-mapped to non bit-mapped
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66
Testing or measuring during manufacture or treatment
Applicants:
KLA-TENCOR CORPORATION [US/US]; Legal Department One Technology Drive Milpitas, California 95035, US
Inventors:
BRAUER, Bjorn; US
HUANG, Junqing; US
GAO, Lisheng; US
Agent:
MCANDREWS, Kevin; US
MORRIS, Elizabeth M. N.; US
Priority Data:
15/858,51129.12.2017US
62/542,97009.08.2017US
Title (EN) NUISANCE REDUCTION USING LOCATION-BASED ATTRIBUTES
(FR) RÉDUCTION DE NUISANCE À L'AIDE D'ATTRIBUTS BASÉS SUR L'EMPLACEMENT
Abstract:
(EN) Methods and systems are disclosed that provide nuisance reduction in images, such as semiconductor images that include one or more metal lines. A potential defect is correlated against pixel grey level intensity charts for two perpendicular axes. A position of the potential defect relative to a pattern, such as a metal line, is determined along the two axes. The potential defect can be classified as a defect of interest or nuisance event.
(FR) L'invention concerne des procédés et des systèmes qui permettent une réduction de nuisance dans des images, telles que des images semi-conductrices qui comprennent une ou plusieurs lignes métalliques. Un défaut potentiel est corrélé à des diagrammes d'intensité de niveau de gris de pixel pour deux axes perpendiculaires. Une position du défaut potentiel par rapport à un motif, tel qu'une ligne métallique, est déterminée le long des deux axes. Le défaut potentiel peut être classé comme un défaut d'intérêt ou un événement de nuisance.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)