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1. (WO2019031755) LIGHT EMITTING DEVICE HAVING NITRIDE-BASED THIN FILM, MANUFACTURING METHOD THEREFOR AND TEMPLATE FOR MANUFACTURING SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/031755 International Application No.: PCT/KR2018/008670
Publication Date: 14.02.2019 International Filing Date: 31.07.2018
IPC:
H01L 33/00 (2010.01) ,H01L 33/20 (2010.01) ,H01L 33/36 (2010.01) ,H01L 33/12 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
20
with a particular shape, e.g. curved or truncated substrate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
12
with a stress relaxation structure, e.g. buffer layer
Applicants:
주식회사 루미스타 LUMISTAR CO., LTD [KR/KR]; 경기도 안산시 상록구 한양대학로 55 419호 (사동, 창업보육센터) (Sa-dong, Business incubator) 419-ho, 55, Hanyangdaehak-ro, Sangrok-gu Ansan-si Gyeonggi-do 15588, KR
Inventors:
최유항 CHOI, Yuhang; KR
Agent:
문두현 MOON, Doohyun; KR
Priority Data:
10-2017-010092409.08.2017KR
Title (EN) LIGHT EMITTING DEVICE HAVING NITRIDE-BASED THIN FILM, MANUFACTURING METHOD THEREFOR AND TEMPLATE FOR MANUFACTURING SEMICONDUCTOR DEVICE
(FR) DISPOSITIF ÉLECTROLUMINESCENT AYANT UN FILM MINCE À BASE DE NITRURE, SON PROCÉDÉ DE FABRICATION ET GABARIT POUR FABRIQUER UN DISPOSITIF À SEMI-CONDUCTEUR
(KO) 질화물계 박막을 갖는 발광 소자, 이의 제조 방법 및 반도체 소자 제조용 템플릿
Abstract:
(EN) Provided are a light emitting device having a nitride-based thin film, a manufacturing method therefor and a template for manufacturing a semiconductor device. The light emitting device having a nitride-based thin film, according to an embodiment of the present invention, comprises: a separation layer, which comprises an aperture part and remains after a separation process using a laser lift-off method; a first conductive base semiconductor layer, which has the outer wall exposed to the aperture part and is formed of a nitride-based semiconductor on the separation layer; a first conductive semiconductor layer comprising a first conductive additional semiconductor layer; an active layer and a second conductive semiconductor layer sequentially arranged on the first conductive semiconductor layer; and electrodes connected to the first and second conductive semiconductor layers, and spaced from each other, wherein the separation layer has higher separation process selectivity than the first conductive base semiconductor layer when the laser lift-off method is carried out.
(FR) L'invention concerne un dispositif électroluminescent ayant un film mince à base de nitrure, son procédé de fabrication et un gabarit pour fabriquer un dispositif à semi-conducteur. Le dispositif électroluminescent ayant un film mince à base de nitrure, selon un mode de réalisation de la présente invention, comprend : une couche de séparation, qui comprend une partie d'ouverture et reste après un processus de séparation à l'aide d'un procédé de décollement au laser; une première couche semi-conductrice de base conductrice, qui a la paroi externe exposée à la partie d'ouverture et est formée d'un semi-conducteur à base de nitrure sur la couche de séparation; une première couche semi-conductrice conductrice comprenant une première couche semi-conductrice supplémentaire conductrice; une couche active et une seconde couche semi-conductrice conductrice disposées de manière séquentielle sur la première couche semi-conductrice conductrice; et des électrodes connectées aux première et seconde couches semi-conductrices conductrices, et espacées les unes des autres, la couche de séparation présentant une sélectivité de processus de séparation supérieure à celle de la première couche semi-conductrice de base conductrice lorsque le procédé de décollement au laser est réalisé.
(KO) 질화물계 박막을 갖는 발광 소자, 이의 제조 방법 및 반도체 소자 제조용 템플릿이 제공된다. 본 발명의 실시예에 따른 질화물계 박막을 갖는 발광 소자는 개구부를 구비하고, 레이저 리프트 오프법에 의한 분리 공정을 통해 잔류되는 분리층과, 상기 개구부를 통해 외측벽이 노출되며 상기 분리층 상에 질화물계 반도체로 형성되는 제 1 도전형 기저 반도체층과, 제 1 도전형 추가 반도체층을 포함하는 제 1 도전형 반도체층과, 상기 제 1 도전형 반도체층 상에 순차적으로 배치되는 활성층 및 제 2 도전형 반도체층, 및 상기 제 1 및 상기 제 2 도전형 반도체층에 연결되며 서로 이격되는 전극들을 포함하고, 상기 분리층은 상기 레이저 리프트 오프법을 수행할 때, 상기 제 1 도전형 기저 반도체층보다 높은 분리 공정의 선택도를 갖는다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)