Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019031745) LIGHT-EMITTING DIODE
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/031745 International Application No.: PCT/KR2018/008593
Publication Date: 14.02.2019 International Filing Date: 30.07.2018
IPC:
H01L 33/42 (2010.01) ,H01L 33/62 (2010.01) ,H01L 33/10 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
40
Materials therefor
42
Transparent materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
62
Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
10
with a light reflecting structure, e.g. semiconductor Bragg reflector
Applicants:
서울바이오시스주식회사 SEOUL VIOSYS CO., LTD. [KR/KR]; 경기도 안산시 단원구 산단로 163번길 65-16 65-16, Sandan-ro 163beon-gil, Danwon-gu Ansan-si Gyeonggi-do 15429, KR
Inventors:
이섬근 LEE, Seom Geun; KR
신찬섭 SHIN, Chan Seob; KR
양명학 YANG, Myeong Hak; KR
이진웅 LEE, Jin Woong; KR
Agent:
특허법인에이아이피 AIP PATENT & LAW FIRM; 서울시 강남구 테헤란로 14길 30-1 30-1, Teheran-ro 14-gil, Gangnam-gu Seoul 06239, KR
Priority Data:
10-2017-010245311.08.2017KR
10-2018-008776827.07.2018KR
Title (EN) LIGHT-EMITTING DIODE
(FR) DIODE ÉLECTROLUMINESCENTE
(KO) 발광 다이오드
Abstract:
(EN) A light-emitting diode according to one embodiment comprises a first conductive type semiconductor layer and a mesa disposed on the first conductive type semiconductor layer, wherein the mesa includes: a semiconductor laminate including an active layer and a second conductive type semiconductor layer; a ZnO layer located on the second conductive type semiconductor layer; a lower insulation layer covering the ZnO layer and the mesa and having an opening that exposes the ZnO layer; a first pad metal layer disposed on the lower insulation layer and electrically connected to the first conductive type semiconductor layer; a second pad metal layer electrically connected to the ZnO layer through the opening of the lower insulation layer and spaced apart from the first pad metal layer in a horizontal direction; and an upper insulation layer covering the first pad metal layer and the second pad metal layer and having a first opening and a second opening which expose the first pad metal layer and the second pad metal layer, respectively, wherein the ZnO layer below the opening of the lower insulation layer has a thickness thinner than that of the ZnO layer covered with the lower insulation layer.
(FR) Une diode électroluminescente selon un mode de réalisation de l'invention comprend une couche semi-conductrice de premier type conducteur et une mesa disposée sur la couche semi-conductrice de premier type conducteur, la mesa comprenant : un stratifié semi-conducteur comprenant une couche active et une couche semi-conductrice de second type conducteur ; une couche de ZnO située sur la couche semi-conductrice de second type conducteur ; une couche d'isolation inférieure recouvrant la couche de ZnO et la mesa et ayant une ouverture qui expose la couche de ZnO ; une première couche de métal de pastille disposée sur la couche d'isolation inférieure et connectée électriquement à la couche semi-conductrice de premier type conducteur ; une seconde couche de métal de pastille connectée électriquement à la couche de ZnO par l'ouverture de la couche d'isolation inférieure et espacée de la première couche de métal de pastille dans une direction horizontale; et une couche d'isolation supérieure recouvrant la première couche de métal de pastille et la seconde couche de métal de pastille et ayant une première ouverture et une seconde ouverture qui exposent la première couche de métal de pastille et la seconde couche de métal de pastille, respectivement, la couche de ZnO sous l'ouverture de la couche d'isolation inférieure ayant une épaisseur inférieure à celle de la couche de ZnO recouverte par la couche d'isolation inférieure.
(KO) 일 실시예에 따른 발광 다이오드는, 제1 도전형 반도체층 및 상기 제1 도전형 반도체층 상에 위치하는 메사를 포함하되, 상기 메사는 활성층 및 제2 도전형 반도체층을 포함하는 반도체 적층체; 상기 제2 도전형 반도체층 상에 위치하는 ZnO층; 상기 ZnO층 및 메사를 덮되, 상기 ZnO층을 노출시키는 개구부를 가지는 하부 절연층; 상기 하부 절연층 상에 배치되고, 상기 제1 도전형 반도체층에 전기적으로 접속하는 제1 패드 금속층; 상기 하부 절연층의 개구부를 통해 상기 ZnO층에 전기적으로 접속하며, 상기 제1 패드 금속층으로부터 수평 방향으로 이격된 제2 패드 금속층; 상기 제1 패드 금속층 및 상기 제2 패드 금속층을 덮되 상기 제1 패드 금속층 및 상기 제2 패드 금속층을 각각 노출시키는 제1 개구부 및 제2 개구부를 가지는 상부 절연층을 포함하고, 상기 하부 절연층의 개구부 아래의 상기 ZnO층의 두께는 상기 하부 절연층으로 덮인 ZnO층의 두께보다 얇다.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)