Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019031591) ELECTRICAL-MEASUREMENT-TYPE SURFACE PLASMON RESONANCE SENSOR, AND ELECTRICAL-MEASUREMENT-TYPE SURFACE PLASMON RESONANCE SENSOR CHIP USED IN SAME
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/031591 International Application No.: PCT/JP2018/029979
Publication Date: 14.02.2019 International Filing Date: 09.08.2018
IPC:
G01N 21/41 (2006.01) ,G01N 27/00 (2006.01) ,H01L 31/0232 (2014.01) ,H01L 31/108 (2006.01)
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21
Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible, or ultra-violet light
17
Systems in which incident light is modified in accordance with the properties of the material investigated
41
Refractivity; Phase-affecting properties, e.g. optical path length
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27
Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0232
Optical elements or arrangements associated with the device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
102
characterised by only one potential barrier or surface barrier
108
the potential barrier being of the Schottky type
Applicants:
イムラ・ジャパン株式会社 IMRA JAPAN KABUSHIKIKAISHA [JP/JP]; 北海道札幌市厚別区下野幌テクノパーク2丁目3番6号 2-3-6, Techno-park, Shimonopporo, Atsubetsu-ku, Sapporo-shi, Hokkaido 0040015, JP
国立大学法人北海道大学 NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY [JP/JP]; 北海道札幌市北区北8条西5丁目 Kita 8-jyo Nishi 5-chome, Kita-ku, Sapporo-shi, Hokkaido 0600808, JP
Inventors:
鈴木 博紀 SUZUKI Hironori; JP
アリソン ジャイルズ ALLISON Giles; JP
佐々木 雅紀 SASAKI Masanori; JP
林 弘毅 HAYASHI Koki; JP
三澤 弘明 MISAWA Hiroaki; JP
上野 貢生 UENO Kosei; JP
Agent:
特許業務法人セントクレスト国際特許事務所 CENTCREST IP ATTORNEYS; 東京都中央区京橋2‐8‐21 喜久家ビル9階 Kikuya Bldg. 9th Floor, 2-8-21, Kyobashi, Chuo-ku, Tokyo 1040031, JP
Priority Data:
2017-15518710.08.2017JP
Title (EN) ELECTRICAL-MEASUREMENT-TYPE SURFACE PLASMON RESONANCE SENSOR, AND ELECTRICAL-MEASUREMENT-TYPE SURFACE PLASMON RESONANCE SENSOR CHIP USED IN SAME
(FR) CAPTEUR DE RÉSONANCE PLASMONIQUE DE SURFACE DE TYPE À MESURE ÉLECTRIQUE, ET PUCE DE CAPTEUR DE RÉSONANCE PLASMONIQUE DE SURFACE DE TYPE À MESURE ÉLECTRIQUE UTILISÉE DANS CELUI-CI
(JA) 電気測定型表面プラズモン共鳴センサ及びそれに用いる電気測定型表面プラズモン共鳴センサチップ
Abstract:
(EN) An electrical-measurement-type surface plasmon resonance sensor comprising: a plasmon polariton reinforcing sensor chip, in which a sensor chip having a transparent electrode, an n-type transparent semiconductor film, and a plasmon resonance film electrode disposed in the stated order, and a prism, are disposed such that the prism, the transparent electrode, the n-type transparent semiconductor film, and the plasmon resonance film electrode are in the stated order; and an electrical measurement device that directly measures a current or voltage from the transparent electrode and the plasmon resonance film electrode.
(FR) La présente invention concerne un capteur de résonance plasmonique de surface de type à mesure électrique comprenant : une puce de capteur de renforcement de polariton de plasmon, une puce de capteur qui a une électrode transparente, un film semi-conducteur transparent de type n, et une électrode de film de résonance plasmonique disposés dans l'ordre indiqué, et un prisme, étant disposés de telle sorte que le prisme, l'électrode transparente, le film semi-conducteur transparent de type n et l'électrode de film de résonance plasmonique sont dans l'ordre indiqué. L'invention concerne en outre un dispositif de mesure électrique qui mesure directement un courant ou une tension à partir de l'électrode transparente et de l'électrode de film à résonance plasmonique.
(JA) 透明電極、n型透明半導体膜、及びプラズモン共鳴膜電極がこの順で配置されているセンサチップと、プリズムとが、前記プリズム、前記透明電極、前記n型透明半導体膜、及び前記プラズモン共鳴膜電極の順で配置されたプラズモンポラリトン増強センサチップと、 前記透明電極及び前記プラズモン共鳴膜電極から電流又は電圧を直接測定する電気的測定装置と、 を備える電気測定型表面プラズモン共鳴センサ。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)