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1. (WO2019031513) SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/031513 International Application No.: PCT/JP2018/029634
Publication Date: 14.02.2019 International Filing Date: 07.08.2018
IPC:
H01L 23/29 (2006.01) ,C08G 59/20 (2006.01) ,C08J 7/04 (2006.01) ,C08L 63/00 (2006.01) ,C08L 79/08 (2006.01) ,H01L 21/56 (2006.01) ,H01L 23/00 (2006.01) ,H01L 23/31 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
28
Encapsulation, e.g. encapsulating layers, coatings
29
characterised by the material
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
G
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
59
Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by reaction of epoxy polycondensates with monofunctional low-molecular-weight compounds; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
18
Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
20
characterised by the epoxy compounds used
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
J
WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H142
7
Chemical treatment or coating of shaped articles made of macromolecular substances
04
Coating
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
L
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
63
Compositions of epoxy resins; Compositions of derivatives of epoxy resins
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
L
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
79
Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08L61/-C08L77/259
04
Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
08
Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
56
Encapsulations, e.g. encapsulating layers, coatings
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
28
Encapsulation, e.g. encapsulating layers, coatings
31
characterised by the arrangement
Applicants:
日立化成株式会社 HITACHI CHEMICAL COMPANY, LTD. [JP/JP]; 東京都千代田区丸の内一丁目9番2号 9-2, Marunouchi 1-chome, Chiyoda-ku, Tokyo 1006606, JP
Inventors:
佐藤 英一 SATOH Eiichi; JP
竹森 大地 TAKEMORI Daichi; JP
佐藤 泉樹 SATO Mizuki; JP
戸川 光生 TOGAWA Mitsuo; JP
山田 和彦 YAMADA Kazuhiko; JP
関 皓平 SEKI Kohei; JP
Agent:
三好 秀和 MIYOSHI Hidekazu; JP
高橋 俊一 TAKAHASHI Shunichi; JP
伊藤 正和 ITO Masakazu; JP
高松 俊雄 TAKAMATSU Toshio; JP
Priority Data:
2017-15589110.08.2017JP
Title (EN) SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
(FR) DISPOSITIF À SEMI-CONDUCTEURS ET SON PROCÉDÉ DE PRODUCTION
(JA) 半導体デバイス及びその製造方法
Abstract:
(EN) A semiconductor device which comprises: a substrate; a semiconductor element which is arranged on the substrate; a wire which electrically connects the substrate and the semiconductor element with each other; a first sealing layer which seals the space below the tip of the wire; and a second sealing layer which is provided on top of the first sealing layer, with the bonding wire being interposed therebetween. This semiconductor device is configured such that: the first sealing layer is composed of a cured film of a liquid sealing material; and the second sealing layer is composed of a dried coating film of an insulating resin coating material.
(FR) L'invention concerne un dispositif à semi-conducteurs comprenant : un substrat ; un élément semi-conducteur disposé sur le substrat ; un fil établissant une interconnexion électrique entre le substrat et l'élément semi-conducteur ; une première couche de scellement scellant l'espace sous l'extrémité du fil ; et une seconde couche de scellement disposée au-dessus de la première couche de scellement, le fil de liaison étant interposé entre ces dernières. Le présent dispositif à semi-conducteurs est conçu de sorte que : la première couche de scellement soit composée d'un film durci d'un matériau de scellement liquide ; et la seconde couche de scellement soit composée d'un film de revêtement séché d'un matériau de revêtement en résine isolante.
(JA) 基板と、上記基板上に配置された半導体素子と、上記基板と上記半導体素子とを電気的に接続するワイヤと、上記ワイヤの頂点よりも下部の空間を封止する第1の封止層と、上記第1の封止層の上部に上記ボンディングワイヤを介して設けられる第2の封止層とを有する半導体デバイスであって、上記第1の封止層が液状封止材の硬化膜からなり、上記第2の封止層が絶縁性樹脂コート材の乾燥塗膜からなる、半導体デバイス。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)