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1. (WO2019031498) Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/031498 International Application No.: PCT/JP2018/029589
Publication Date: 14.02.2019 International Filing Date: 07.08.2018
IPC:
H01L 21/60 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60
Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
Applicants:
日鉄ケミカル&マテリアル株式会社 NIPPON STEEL CHEMICAL & MATERIAL CO., LTD. [JP/JP]; 東京都中央区日本橋一丁目13番1号 13-1, Nihonbashi 1-chome, Chuo-ku, Tokyo 1030027, JP
日鉄マイクロメタル株式会社 NIPPON MICROMETAL CORPORATION [JP/JP]; 埼玉県入間市大字狭山ヶ原158番地1 158-1 Oaza Sayamagahara, Iruma-shi, Saitama 3580032, JP
Inventors:
小山田 哲哉 OYAMADA Tetsuya; JP
宇野 智裕 UNO Tomohiro; JP
山田 隆 YAMADA Takashi; JP
小田 大造 ODA Daizo; JP
Agent:
吉田 正義 YOSHIDA Tadanori; JP
Priority Data:
2017-15477109.08.2017JP
Title (EN) Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE
(FR) FIL DE CONNEXION EN ALLIAGE DE CUIVRE POUR UN DISPOSITIF SEMI-CONDUCTEUR
(JA) 半導体装置用Cu合金ボンディングワイヤ
Abstract:
(EN) Provided is a bonding wire for a semiconductor device that can suppress capillary wear. A Cu alloy bonding wire for a semiconductor device is characterized in that, among crystal orientations of a wire surface, the total of the abundance ratio of a <110> crystal orientation and a <111> crystal orientation in which the angle difference with respect to the direction perpendicular to one plane including the wire center axis is 15 degrees or less is 40 to 90% in terms of average area ratio.
(FR) L'invention concerne un fil de connexion pour un dispositif semi-conducteur qui peut supprimer l'usure capillaire. Un fil de connexion en alliage de Cu pour un dispositif semi-conducteur est caractérisé en ce que, parmi les orientations cristallines d'une surface de fil, le total du rapport d'abondance d'une orientation cristalline <110> et d'une orientation cristalline <111> dans lesquelles la différence angulaire par rapport à la direction perpendiculaire à un plan comprenant l'axe central du fil est de 15 degrés ou moins, représente 40 à 90 % en termes de rapport surfacique moyen.
(JA) キャピラリ摩耗を抑制することができる半導体装置用ボンディングワイヤを提供する。半導体装置用Cu合金ボンディングワイヤは、ワイヤ表面の結晶方位のうち、ワイヤ中心軸を含む1つの平面に垂直な方向に対して角度差が15度以下である<110>結晶方位と<111>結晶方位の存在比率の合計が、平均面積率で40%以上90%以下であることを特徴とする。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)