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1. (WO2019031497) Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/031497 International Application No.: PCT/JP2018/029588
Publication Date: 14.02.2019 International Filing Date: 07.08.2018
IPC:
H01L 21/60 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60
Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
Applicants:
日鉄ケミカル&マテリアル株式会社 NIPPON STEEL CHEMICAL & MATERIAL CO., LTD. [JP/JP]; 東京都中央区日本橋一丁目13番1号 13-1, Nihonbashi 1-chome, Chuo-ku, Tokyo 1030027, JP
日鉄マイクロメタル株式会社 NIPPON MICROMETAL CORPORATION [JP/JP]; 埼玉県入間市大字狭山ヶ原158番地1 158-1 Oaza Sayamagahara, Iruma-shi, Saitama 3580032, JP
Inventors:
小山田 哲哉 OYAMADA Tetsuya; JP
宇野 智裕 UNO Tomohiro; JP
山田 隆 YAMADA Takashi; JP
小田 大造 ODA Daizo; JP
Agent:
吉田 正義 YOSHIDA Tadanori; JP
Priority Data:
2017-15477009.08.2017JP
Title (EN) Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE
(FR) FIL DE CONNEXION EN ALLIAGE DE CUIVRE POUR DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置用Cu合金ボンディングワイヤ
Abstract:
(EN) Provided is a Cu alloy bonding wire for a semiconductor device, the bonding wire being capable of satisfying the requirements of high-density LSI applications. The Cu alloy bonding wire for a semiconductor device is characterized in that, among the crystal orientations of the wire surface, the abundance ratio of <110> crystal orientation having an angular difference of 15 degrees or less relative to a direction perpendicular to one plane including the wire center axis is 25%-70% as an average area ratio.
(FR) L'invention concerne un fil de connexion en alliage de cuivre pour un dispositif à semi-conducteur, le fil de connexion pouvant satisfaire aux exigences d'applications d'intégration à grande échelle à haute densité. Le fil de connexion en alliage de cuivre pour un dispositif à semi-conducteur est caractérisé en ce que, parmi les orientations de cristaux de la surface de fil, le rapport d'abondance d'orientation cristalline <110> ayant une différence angulaire de 15 degrés ou moins par rapport à une direction perpendiculaire à un plan comprenant l'axe central de fil est de 25 % à 70 % en tant que rapport surfacique moyen.
(JA) 高密度LSI用途における要求を満たすことができる半導体装置用Cu合金ボンディングワイヤを提供する。半導体装置用Cu合金ボンディングワイヤは、ワイヤ表面の結晶方位のうち、ワイヤ中心軸を含む1つの平面に垂直な方向に対して角度差が15度以下である<110>結晶方位の存在比率が、平均面積率で25%以上70%以下であることを特徴とする。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)