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1. (WO2019031361) PELLICLE AND METHOD FOR PRODUCING PELLICLE
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/031361 International Application No.: PCT/JP2018/028904
Publication Date: 14.02.2019 International Filing Date: 01.08.2018
IPC:
G03F 1/62 (2012.01) ,G03F 1/64 (2012.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
62
Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
62
Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
64
characterised by the frames, e.g. structure or material thereof
Applicants:
エア・ウォーター株式会社 AIR WATER INC. [JP/JP]; 北海道札幌市中央区北3条西1丁目2番地 2, Kita 3-jo Nishi 1-chome, Chuo-ku, Sapporo-shi Hokkaido 0600003, JP
Inventors:
奥 秀彦 OKU, Hidehiko; JP
秀 一郎 HIDE, Ichiro; JP
Agent:
椿 豊 TSUBAKI, Yutaka; JP
Priority Data:
2017-15356908.08.2017JP
Title (EN) PELLICLE AND METHOD FOR PRODUCING PELLICLE
(FR) PELLICULE ET PROCÉDÉ POUR PRODUIRE DES PELLICULES
(JA) ペリクルおよびペリクルの製造方法
Abstract:
(EN) Provided are: a pellicle (1) which is capable of improving the production yield; and a method for producing a pellicle. This method for producing a pellicle comprises: a step for preparing a supporting body (3) that contains Si; and a step for forming a pellicle film (4) on the surface of the supporting body. The step for forming a pellicle film comprises: a step for forming an SiC film (121) that has a first average carbon concentration on the surface of the supporting body by carbonizing Si in the surface of the supporting body; and a step for forming an SiC film (122) that has a second average carbon concentration which is different from the first average carbon concentration on the surface of the SiC film. This method for producing a pellicle additionally comprises a step for having at least a part of the back surface of an SiC film (12) exposed by means of wet etching.
(FR) L'invention concerne : une pellicule (1) qui est capable d'améliorer le rendement de production ; et un procédé pour produire une pellicule. Ce procédé pour produire une pellicule comprend : une étape de préparation d'un support (3) qui contient du Si ; et une étape de formation d'un film de pellicule (4) sur la surface du support. L'étape de formation d'un film de pellicule comprend : une étape consistant à saturer de Si la surface du support pour former sur la surface du support un film en SiC (121) ayant une première concentration moyenne en carbone ; et une étape consistant à former sur la surface du film de SiC un film de SiC (122) ayant une seconde concentration moyenne en carbone qui est différente de la première concentration moyenne en carbone. Ce procédé de fabrication d'une pellicule comprend également une étape consistant à exposer au moins une partie de la surface arrière d'un film de SiC (12) au moyen d'une gravure humide.
(JA) 製造歩留まりを向上することのできるペリクル(1)およびペリクルの製造方法を提供する。ペリクルの製造方法は、Siを含む支持体(3)を準備する工程と、支持体の表面にペリクル膜(4)を形成する工程とを備える。ペリクル膜を形成する工程は、支持体の表面のSiを炭化することにより、支持体の表面に、第1の平均炭素濃度を有するSiC膜(121)を形成する工程と、SiC膜の表面に、第1の平均炭素濃度とは異なる第2の平均炭素濃度を有するSiC膜(122)を成膜する工程とを含む。ペリクルの製造方法は、ウエットエッチングによりSiC膜(12)の裏面の少なくとも一部を露出させる工程をさらに備える。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)