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1. (WO2019031250) RADIATION SENSITIVE COMPOSITION AND RESIST PATTERN FORMING METHOD
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/031250 International Application No.: PCT/JP2018/027972
Publication Date: 14.02.2019 International Filing Date: 25.07.2018
IPC:
G03F 7/038 (2006.01) ,G03F 7/004 (2006.01) ,G03F 7/20 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
038
Macromolecular compounds which are rendered insoluble or differentially wettable
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
Applicants:
JSR株式会社 JSR CORPORATION [JP/JP]; 東京都港区東新橋一丁目9番2号 9-2, Higashi-Shinbashi 1-chome, Minato-ku, Tokyo 1058640, JP
Inventors:
中川 恭志 NAKAGAWA Hisashi; JP
浅野 裕介 ASANO Yusuke; JP
峯岸 信也 MINEGISHI Shinya; JP
Agent:
天野 一規 AMANO Kazunori; JP
Priority Data:
2017-15612610.08.2017JP
Title (EN) RADIATION SENSITIVE COMPOSITION AND RESIST PATTERN FORMING METHOD
(FR) COMPOSITION SENSIBLE AU RAYONNEMENT, ET PROCÉDÉ DE FORMATION DE MOTIF DE RÉSERVE
(JA) 感放射線性組成物及びレジストパターン形成方法
Abstract:
(EN) The purpose of the present invention is to provide: a radiation sensitive composition which has excellent sensitivity and resolution; and a resist pattern forming method. The present invention is a radiation sensitive composition which contains a polymetalloxane that has a structural unit represented by formula (1), a radiation sensitive acid generator, and a solvent. In formula (1), M represents a germanium atom, a tin atom or a lead atom; Ar1 represents a substituted or unsubstituted aryl group having 6-20 ring members or a substituted or unsubstituted heteroaryl group having 5-20 ring members; R1 represents a monovalent organic group having 1-20 carbon atoms, a hydrogen atom, a halogen atom or a hydroxy group; and n represents 2 or 3.
(FR) L'invention a pour objet de fournir une composition sensible au rayonnement excellente en termes de sensibilité et de résolution, et un procédé de formation de motif de réserve. Plus précisément, l'invention concerne une composition sensible au rayonnement qui comprend un polymétalloxane présentant une unité structurale représentée par la formule (1), un corps générant un acide sensible au rayonnement, et un solvant. Dans la formule (1), M représente un atome de germanium, un atome d'étain ou un atome de plomb. Ar représente un groupe aryle de 6 à 20 chaînons substitué ou non substitué, ou un groupe hétéroaryle de 5 à 20 chaînons substitué ou non substitué. R représente un groupe organique monovalent de 1 à 20 atomes de carbone, un atome d'hydrogène, un atome d'hlogène et un groupe hydroxy. n représente 2 ou 3.
(JA) 感度及び解像性に優れる感放射線性組成物及びレジストパターン形成方法の提供を目的とする。本発明は、下記式(1)で表される構造単位を有するポリメタロキサンと、感放射線性酸発生体と、溶媒とを含有する感放射線性組成物である。下記式(1)中、Mは、ゲルマニウム原子、スズ原子又は鉛原子である。Arは、置換若しくは非置換の環員数6~20のアリール基又は置換若しくは非置換の環員数5~20のヘテロアリール基である。Rは、炭素数1~20の1価の有機基、水素原子、ハロゲン原子又はヒドロキシ基である。nは、2又は3である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)