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1. (WO2019031226) SPIN CURRENT MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/031226 International Application No.: PCT/JP2018/027646
Publication Date: 14.02.2019 International Filing Date: 24.07.2018
IPC:
H01L 21/8239 (2006.01) ,G11C 11/16 (2006.01) ,H01L 27/105 (2006.01) ,H01L 29/82 (2006.01) ,H01L 43/08 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02
using magnetic elements
16
using elements in which the storage effect is based on magnetic spin effect
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
82
controllable by variation of the magnetic field applied to the device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
Applicants:
TDK株式会社 TDK CORPORATION [JP/JP]; 東京都中央区日本橋二丁目5番1号 2-5-1, Nihonbashi, Chuo-ku, Tokyo 1036128, JP
Inventors:
塩川 陽平 SHIOKAWA Yohei; JP
佐々木 智生 SASAKI Tomoyuki; JP
Agent:
棚井 澄雄 TANAI Sumio; JP
荒 則彦 ARA Norihiko; JP
飯田 雅人 IIDA Masato; JP
荻野 彰広 OGINO Akihiro; JP
Priority Data:
2017-15246807.08.2017JP
Title (EN) SPIN CURRENT MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY
(FR) ÉLÉMENT À EFFET MAGNÉTORÉSISTIF DE COURANT DE SPIN ET MÉMOIRE MAGNÉTIQUE
(JA) スピン流磁気抵抗効果素子及び磁気メモリ
Abstract:
(EN) This spin current magnetoresistive effect element is provided with: a magnetoresistive effect element; a spin orbit torque wire which extends in a first direction intersecting a stacked direction of the magnetoresistive effect element, and which is positioned on the second ferromagnetic metal layer side of the magnetoresistive effect element; and a control unit which controls the direction of current during reading. The control unit is connected to at least one of a first point, a second point, and a third point, the first and second points being disposed at positions sandwiching the magnetoresistive effect element in the first direction on the spin orbit torque wire, and the third point being disposed on the first ferromagnetic layer side of the magnetoresistive effect element. The control unit, during reading, diverges a read current from the third point toward the first point and the second point, or converges read currents from the first point and the second point toward the third point.
(FR) L'invention concerne un élément à effet magnétorésistif de courant de spin comprenant : un élément à effet magnétorésistif; un fil de couple spin-orbite qui s'étend dans une première direction croisant une direction empilée de l'élément à effet magnétorésistif, et qui est positionné sur le second côté de la couche métallique ferromagnétique de l'élément à effet magnétorésistif; et une unité de commande qui commande la direction du courant pendant la lecture. L'unité de commande est connectée à au moins l'un d'un premier point, d'un second point et d'un troisième point, les premier et second points étant disposés à des positions prenant en sandwich l'élément à effet magnétorésistif dans la première direction sur le fil de couple spin-orbite, et le troisième point étant disposé sur le premier côté de couche ferromagnétique de l'élément à effet magnétorésistif. L'unité de commande, pendant la lecture, diverge un courant de lecture du troisième point vers le premier point et le second point, ou fait converger des courants de lecture du premier point et du second point vers le troisième point.
(JA) このスピン流磁気抵抗効果素子は、磁気抵抗効果素子と、前記磁気抵抗効果素子の積層方向に対して交差する第1の方向に延在し、前記磁気抵抗効果素子の前記第2強磁性金属層の側に位置するスピン軌道トルク配線と、読み出し時の電流の向きを制御する制御部と、を備え、前記制御部は、前記スピン軌道トルク配線において第1の方向に前記磁気抵抗効果素子を挟む位置にある第1点及び第2点、と、前記磁気抵抗効果素子の前記第1強磁性層側の第3点とのうち少なくとも一つに接続され、前記制御部は、読み出し時に読み出し電流を、前記第3点から前記第1点及び前記第2点に向かって分流する、または、前記第1点及び前記第2点から前記第3点に向かって合流させる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)