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1. (WO2019031105) OXIDE SINTERED COMPACT AND SPUTTERING TARGET
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/031105 International Application No.: PCT/JP2018/025106
Publication Date: 14.02.2019 International Filing Date: 02.07.2018
IPC:
C23C 14/34 (2006.01) ,C04B 35/01 (2006.01) ,C23C 14/08 (2006.01) ,H01B 1/08 (2006.01) ,H01B 5/14 (2006.01) ,H01B 13/00 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
01
based on oxides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
08
Oxides
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
1
Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
06
mainly consisting of other non-metallic substances
08
oxides
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
5
Non-insulated conductors or conductive bodies characterised by their form
14
comprising conductive layers or films on insulating-supports
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
13
Apparatus or processes specially adapted for manufacturing conductors or cables
Applicants:
三井金属鉱業株式会社 MITSUI MINING & SMELTING CO., LTD. [JP/JP]; 東京都品川区大崎一丁目11番1号 1-11-1, Osaki, Shinagawa-ku, Tokyo 1418584, JP
Inventors:
松元 謙士 MATSUMOTO, Kenshi; JP
井上 雅樹 INOUE, Masaki; JP
中村 信一郎 NAKAMURA, Shinichiro; JP
矢野 智泰 YANO, Tomoyasu; JP
Agent:
特許業務法人SSINPAT SSINPAT PATENT FIRM; 東京都品川区西五反田七丁目13番6号 五反田山崎ビル6階 Gotanda Yamazaki Bldg. 6F, 13-6, Nishigotanda 7-chome, Shinagawa-ku, Tokyo 1410031, JP
Priority Data:
2017-15304308.08.2017JP
Title (EN) OXIDE SINTERED COMPACT AND SPUTTERING TARGET
(FR) COMPACT FRITTÉ D’OXYDE ET CIBLE DE PULVÉRISATION CATHODIQUE
(JA) 酸化物焼結体およびスパッタリングターゲット
Abstract:
(EN) The present invention relates to an oxide sintered compact, the component elements of which are In, Sn, Ti and O, the In content being 88.0-98.2 mass% calculated as In2O3, Sn content being 1.0-8.0 mass% calculated as SnO2 and Ti content being 0.8-4.0 mass% calculated as TiO2. With this oxide sintered contact, it is possible to obtain a sputtering target, which can form a thin film from which a transparent electrically conductive film of high transparency can be obtained and from which a transparent electrically conductive film that also has low resistance can be obtained without performing heat treatment at high temperature.
(FR) La présente invention concerne un comprimé fritté d’oxyde, dont les éléments constitutifs sont In, Sn, Ti et O, la teneur en In étant de 88,0 à 98,2 % en masse calculée en In2O3, la teneur en Sn étant de 1,0 à 8,0 % en masse calculée en SnO2 et la teneur en Ti étant de 0,8 à 4,0 % en masse calculée en TiO2. Avec ce compact fritté d’oxyde, il est possible d’obtenir une cible de pulvérisation cathodique, qui peut former un film mince à partir duquel un film électriquement conducteur transparent de transparence élevée peut être obtenu et à partir duquel un film électriquement conducteur transparent qui a également une faible résistance peut être obtenu sans effectuer un traitement thermique à haute température.
(JA) 本発明は、構成元素がIn、Sn、TiおよびOであり、Inの含有比率がIn23換算で88.0~98.2質量%であり、Snの含有比率がSnO2換算で1.0~8.0質量%であり、Tiの含有比率がTiO2換算で0.8~4.0質量%である酸化物焼結体である。本発明の酸化物焼結体により、透明性が高い透明導電膜、また、さらに抵抗が低い透明導電膜を、高温の熱処理をしなくても得ることができる薄膜を成膜できるスパッタリングターゲットを得ることができる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)