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1. (WO2019030517) PHYSICALLY UNCLONABLE FUNCTION DEVICE, METHOD AND APPARATUS
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/030517 International Application No.: PCT/GB2018/052253
Publication Date: 14.02.2019 International Filing Date: 07.08.2018
IPC:
H04L 9/32 (2006.01) ,H01L 23/00 (2006.01) ,H01L 29/165 (2006.01) ,H01L 29/88 (2006.01)
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
L
TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
9
Arrangements for secret or secure communication
32
including means for verifying the identity or authority of a user of the system
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
16
including, apart from doping materials or other impurities, only elements of the fourth group of the Periodic System in uncombined form
161
including two or more of the elements provided for in group H01L29/1688
165
in different semiconductor regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
88
Tunnel-effect diodes
Applicants:
QUANTUM BASE LIMITED [GB/GB]; Alpha House 4 Greek Street Stockport Cheshire SK3 8AB, GB
Inventors:
YOUNG, Robert James; GB
Agent:
APPLEYARD LEES IP LLP; 15 Clare Road Halifax Yorkshire HX1 2HY, GB
Priority Data:
1712839.810.08.2017GB
Title (EN) PHYSICALLY UNCLONABLE FUNCTION DEVICE, METHOD AND APPARATUS
(FR) DISPOSITIF DE FONCTION PHYSIQUEMENT NON CLONABLE, PROCÉDÉ ET APPAREIL
Abstract:
(EN) A physically unclonable function (PUF) device 1 capable of exhibiting a unique quantum mechanical effect as a result of quantum mechanical confinement exhibited by the device 1. The device 1 comprises a group IV semiconductor heterostructure. The group IV semiconductor heterostructure may comprise Silicon/Germanium. The device 1 may comprise a group IV semiconductor resonant tunnelling diode (RTD). A Si-integrated circuit, method, use, and apparatus are also provided.
(FR) Un dispositif à fonction physiquement non clonable (PUF) 1 capable de présenter un effet de mécanique quantique unique en conséquence du confinement de mécanique quantique présenté par le dispositif 1. Le dispositif 1 comprend une hétérostructure semi-conductrice du groupe IV. L'hétérostructure semi-conductrice du groupe IV peut comprendre du silicium/germanium. Le dispositif 1 peut comprendre une diode à effet tunnel résonant à semi-conducteur du groupe IV (RTD). L'invention concerne également un circuit intégré silicium, un procédé, une utilisation et un appareil.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)