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1. (WO2019030400) DEVICE AND METHOD FOR APPLYING PRESSURE TO STRESS-PRODUCING LAYERS FOR IMPROVED GUIDANCE OF A SEPARATION CRACK
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/030400 International Application No.: PCT/EP2018/071814
Publication Date: 14.02.2019 International Filing Date: 10.08.2018
IPC:
B23K 26/00 (2014.01) ,B23K 26/53 (2014.01) ,B23K 26/0622 (2014.01) ,B28D 5/00 (2006.01) ,B23K 26/70 (2014.01) ,B23K 26/14 (2014.01) ,B23K 26/146 (2014.01) ,H01L 21/304 (2006.01) ,H01L 21/78 (2006.01) ,B23K 103/00 (2006.01)
B PERFORMING OPERATIONS; TRANSPORTING
23
MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
K
SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26
Working by laser beam, e.g. welding, cutting, boring
[IPC code unknown for B23K 26/53][IPC code unknown for B23K 26/0622]
B PERFORMING OPERATIONS; TRANSPORTING
28
WORKING CEMENT, CLAY, OR STONE
D
WORKING STONE OR STONE-LIKE MATERIALS
5
Fine working of gems, jewels, crystals, e.g. of semiconductor material; Apparatus therefor
[IPC code unknown for B23K 26/70]
B PERFORMING OPERATIONS; TRANSPORTING
23
MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
K
SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26
Working by laser beam, e.g. welding, cutting, boring
14
using a flow, e.g. a jet of gas, in conjunction with the laser beam
[IPC code unknown for B23K 26/146]
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
B PERFORMING OPERATIONS; TRANSPORTING
23
MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
K
SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
103
Materials to be soldered, welded or cut
Applicants:
SILTECTRA GMBH [DE/DE]; Manfred-von-Ardenne-Ring 7 01099 Dresden, DE
Inventors:
SWOBODA, Marko; DE
RIESKE, Ralf; DE
BEYER, Christian; DE
RICHTER, Jan; DE
Agent:
ASCHERL, Andreas; DE
CABRERIZO, Dominik; DE
ETTMAYR, Andreas; DE
OHMER, Benjamin; DE
Priority Data:
10 2017 007 585.911.08.2017DE
Title (EN) DEVICE AND METHOD FOR APPLYING PRESSURE TO STRESS-PRODUCING LAYERS FOR IMPROVED GUIDANCE OF A SEPARATION CRACK
(FR) DISPOSITIF ET PROCÉDÉ POUR SOLLICITER DES COUCHES DE GÉNÉRATION DE TENSION AVEC UNE PRESSION EN VUE D’UN GUIDAGE AMÉLIORÉ D’UNE FISSURE DE SÉPARATION
(DE) VORRICHTUNG UND VERFAHREN ZUM BEAUFSCHLAGEN VON SPANNUNGSERZEUGUNGSSCHICHTEN MIT DRUCK ZUM VERBESSERTEN FÜHREN EINES ABTRENNRISSES
Abstract:
(EN) The present invention relates to a method, according to claim 1, for separating at least one solid body layer (1), particularly a solid body disk, from a donor substrate (2). The method according to the invention comprises preferably at least the following steps: providing a donor substrate (2); producing or arranging a stress-producing layer (4) on a particularly flat surface (5) of the donor substrate (2) which axially defines the donor substrate (2); pressing at least one pressure application element (6) of a pressure application device (8) onto at least one pre-determined portion of the stress-producing layer (4), in order to press the stress-producing layer (4) onto the surface (5); separating the solid body layer (1) from the donor substrate (2) by thermally applying the stress-producing layer (4), thereby producing mechanical stress in the donor substrate (2), the mechanical stress creating a crack for separating a solid body layer (1), and the pressure application element (6) being pressed onto the stress-producing layer (4) during the thermal application of the stress-producing layer (4).
(FR) La présente invention concerne un procédé, selon la revendication 1, de séparation d’au moins une couche de solide (1), notamment un disque de solide, d’un substrat donneur (2). Le procédé selon l’invention comprend ici de préférence au moins les étapes suivantes : fourniture d’un substrat donneur (2), génération ou disposition d’une couche de génération de tension (4) au niveau d’une surface (5), notamment plane, du substrat donneur (2) qui délimite le substrat donneur (2) dans le sens axial, pressage d’au moins un élément d’application de pression (6) d’un dispositif d’application de pression (8) au niveau d’au moins une part prédéfinie de la couche de génération de tension (4) en vue de presser la couche de génération de tension (4) contre la surface (5), séparation de la couche de solide (1) du substrat donneur (2) par sollicitation thermique de la couche de génération de tension (4), ce qui produit des tensions mécaniques dans le substrat donneur (2). Une fissure destinée à séparer une couche de solide (1) est produite par les tensions mécaniques et l’élément d’application de pression (6) est pressé contre la couche de génération de tension (4) pendant la sollicitation thermique de la couche de génération de tension (4).
(DE) Die vorliegende Erfindung bezieht sich gemäß Anspruch 1 auf ein Verfahren zum Abtrennen von mindestens einer Festkörperlage (1), insbesondere einer Festkörperscheibe, von einem Spendersubstrat (2). Das erfindungsgemäße Verfahren umfasst dabei bevorzugt mindestens die Schritte: Bereitstellen eines Spendersubstrats (2), Erzeugen oder Anordnen einer Spannungserzeugungsschicht (4) an einer das Spendersubstrat (2) axial begrenzenden, insbesondere ebenen, Oberfläche (5) des Spendersubstrats (2), Anpressen von mindestens einem Druckbeaufschlagungselement (6) einer Druckbeaufschlagungseinrichtung (8) an zumindest einen vorbestimmten Anteil der Spannungserzeugungsschicht (4) zum Anpressen der Spannungserzeugungsschicht (4) an die Oberfläche (5), Abtrennen der Festkörperlage (1) von dem Spendersubstrat (2) durch thermisches Beaufschlagen der Spannungserzeugungsschicht (4), wodurch mechanische Spannungen in dem Spendersubstrat (2) erzeugt werden, wobei durch die mechanischen Spannungen ein Riss zum Abtrennen einer Festkörperlage (1) entsteht, wobei das Druckbeaufschlagungselement (6) während der thermischen Beaufschlagung der Spannungserzeugungsschicht (4) an die Spannungserzeugungsschicht (4) angepresst wird.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)