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1. (WO2019030009) SINGLE PHOTON AVALANCHE DIODE AND ARRAY OF SINGLE PHOTON AVALANCHE DIODES
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/030009 International Application No.: PCT/EP2018/070328
Publication Date: 14.02.2019 International Filing Date: 26.07.2018
IPC:
H01L 31/0216 (2014.01) ,H01L 31/0232 (2014.01) ,H01L 31/107 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0216
Coatings
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0232
Optical elements or arrangements associated with the device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
102
characterised by only one potential barrier or surface barrier
107
the potential barrier working in avalanche mode, e.g. avalanche photodiode
Applicants:
AMS AG [AT/AT]; Schloss Premstätten Tobelbader Str. 30 8141 Premstätten, AT
Inventors:
RÖHRER, Georg; AT
Agent:
EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; Schloßschmidstr. 5 80639 München, DE
Priority Data:
17185766.710.08.2017EP
Title (EN) SINGLE PHOTON AVALANCHE DIODE AND ARRAY OF SINGLE PHOTON AVALANCHE DIODES
(FR) DIODE À AVALANCHE À PHOTON UNIQUE ET RÉSEAU DE DIODES À AVALANCHE À PHOTON UNIQUE
Abstract:
(EN) A single photon avalanche diode, SPAD, comprises an active area (10) which is arranged to generate a photon triggered avalanche current. A cover (12) is arranged on or above the active area (10). The cover (12) shields the active area (10) from incident photons. The cover (12) comprises a stack of at least the first and a second metal layer (13, 14). At least one of the metal layers (13, 14), e.g. the first metal layer (13), comprises an aperture (15). The metal layers (13, 14) are arranged in the stack with respect to an optical axis (OA) such as to open an effective aperture (18) along the optical axis (OA). By way of the effective aperture (18) a portion (19) of the active area (10) is exposed to incident photons being incident along the optical axis (OA). The effective aperture (18) is smaller than the aperture (15) arranged in the first metal layer (13).
(FR) La présente invention concerne une diode à avalanche à photon unique, SPAD, qui comprend une zone active (10) qui est agencée de sorte à générer un courant d'avalanche déclenché par photons. Un couvercle (12) est disposé sur ou au-dessus de la surface active (10). Le couvercle (12) protège la zone active (10) des photons incidents. Le couvercle (12) comprend un empilement d'au moins une première et une seconde couche métallique (13, 14). Au moins une des couches métalliques (13, 14), par exemple la première couche métallique (13), comprend une ouverture (15). Les couches métalliques (13, 14) sont disposées dans l'empilement par rapport à un axe optique (OA) de manière à ouvrir une ouverture effective (18) le long de l'axe optique (OA). À l'aide de l'ouverture effective (18), une partie (19) de la zone active (10) est exposée à des photons incidents qui sont incidents le long de l'axe optique (OA). L'ouverture effective (18) est plus petite que l'ouverture (15) disposée dans la première couche métallique (13).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)