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1. (WO2019029912) BAW RESONATOR WITH REDUCED SPURIOUS MODES AND INCREASED QUALITY FACTOR
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/029912 International Application No.: PCT/EP2018/067969
Publication Date: 14.02.2019 International Filing Date: 03.07.2018
IPC:
H03H 3/02 (2006.01) ,H03H 9/02 (2006.01) ,H03H 9/17 (2006.01) ,H03H 9/13 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3
Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007
for the manufacture of electromechanical resonators or networks
02
for the manufacture of piezo-electric or electrostrictive resonators or networks
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02
Details
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
15
Constructional features of resonators consisting of piezo-electric or electrostrictive material
17
having a single resonator
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02
Details
125
Driving means, e.g. electrodes, coils
13
for networks consisting of piezo-electric or electrostrictive materials
Applicants:
RF360 EUROPE GMBH [DE/DE]; Anzinger Str. 13 81671 München, DE
Inventors:
POLLARD, Thomas; US
NATH, Janardan; US
KOUTSAROFF, Ivoyl; US
Agent:
EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; Schloßschmidstr. 5 80639 München, DE
Priority Data:
10 2017 117 870.807.08.2017DE
Title (EN) BAW RESONATOR WITH REDUCED SPURIOUS MODES AND INCREASED QUALITY FACTOR
(FR) RÉSONATEUR BAW À MODES PARASITES RÉDUITS ET FACTEUR DE QUALITÉ ACCRU
Abstract:
(EN) An electrically and acoustically improved resonator is provided. The resonator (BAWR) has a center region (CR) and a termination region (TER) surrounding the center region. A trench (TR) in a top electrode (TE), a frame (FR) on the top electrode, a flap structure (FS) connected to the frame and a notch (NO) in a piezoelectric layer reduce spurious modes and increase the quality factor of the resonator. A lateral Bragg reflector may be realized with a Bragg structure (BS) on a signal conductor (SC) in the top electrode layer spanning the notch.
(FR) L'invention concerne un résonateur amélioré électriquement et acoustiquement. Le résonateur (BAWR) présente une région centrale (CR) et une région de terminaison (TER) entourant la région centrale. Une tranchée (TR) dans une électrode supérieure (TE), un cadre (FR) sur l'électrode supérieure, une structure à volet (FS) reliée au cadre et une encoche (NO) dans une couche piézoélectrique réduisent les modes parasites et augmentent le facteur de qualité du résonateur. Un réflecteur de Bragg latéral peut être obtenu à l'aide d'une structure de Bragg (BS) sur un conducteur de signal (SC) dans la couche d'électrode supérieure recouvrant l'encoche.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)