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1. (WO2019029911) BAW RESONATOR WITH REDUCED LOSSES, RF FILTER COMPRISING A BAW RESONATOR AND METHOD FOR MANUFACTURING A BAW RESONATOR
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/029911 International Application No.: PCT/EP2018/067963
Publication Date: 14.02.2019 International Filing Date: 03.07.2018
IPC:
H03H 3/02 (2006.01) ,H03H 9/02 (2006.01) ,H03H 9/17 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3
Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007
for the manufacture of electromechanical resonators or networks
02
for the manufacture of piezo-electric or electrostrictive resonators or networks
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02
Details
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
15
Constructional features of resonators consisting of piezo-electric or electrostrictive material
17
having a single resonator
Applicants:
RF360 EUROPE GMBH [DE/DE]; Anzinger Str. 13 81671 München, DE
Inventors:
SCHIEK, Maximilian; DE
Agent:
EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; P.O. Box 200734 80007 München, DE
Priority Data:
10 2017 117 869.407.08.2017DE
Title (EN) BAW RESONATOR WITH REDUCED LOSSES, RF FILTER COMPRISING A BAW RESONATOR AND METHOD FOR MANUFACTURING A BAW RESONATOR
(FR) RÉSONATEUR BAW À PERTES RÉDUITES, FILTRE RF COMPRENANT UN RÉSONATEUR BAW ET PROCÉDÉ DE FABRICATION D'UN RÉSONATEUR BAW
Abstract:
(EN) A BAW resonator (RES) with reduced losses, an RF filter with a BAW resonator and a method of manufacturing a BAW resonator are provided. The BAW resonator has a bottom electrode layer (BEL), a top electrode layer (TEL) and an acoustic reflector (REF) between the bottom electrode layer and the top electrode layer. The reflector is arranged in the edge region (ER) surrounding the active region (AR) and follows the perimeter of the resonator. The reflector may be realized by a recess in the piezoelectric material (PM). The top electrode (TE) may fully or partially cover the recess (TR).
(FR) L'invention concerne un résonateur (RES) BAW à pertes réduites, un filtre RF comprenant un résonateur BAW et un procédé de fabrication d'un résonateur BAW. Le résonateur BAW contient une couche d'électrode inférieure (BEL), une couche d'électrode supérieure (TEL) et un réflecteur acoustique (REF) situé entre la couche d'électrode inférieure et la couche d'électrode supérieure. Le réflecteur est disposé dans la région de bord (ER) entourant la région active (AR) et suit le périmètre du résonateur. Le réflecteur peut être réalisé au moyen d'une cavité dans le matériau piézoélectrique (PM). L'électrode supérieure (TE) peut recouvrir entièrement ou partiellement la cavité (TR).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)