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1. (WO2019029270) TRENCH GATE IGBT AND MANUFACTURING METHOD THEREFOR
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/029270 International Application No.: PCT/CN2018/091786
Publication Date: 14.02.2019 International Filing Date: 19.06.2018
IPC:
H01L 29/739 (2006.01) ,H01L 21/331 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
72
Transistor-type devices, i.e. able to continuously respond to applied control signals
739
controlled by field effect
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
328
Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors
33
the devices comprising three or more electrodes
331
Transistors
Applicants:
格力电器(武汉)有限公司 GREE ELECTRIC APPLIANCES (WUHAN) CO., LTD [CN/CN]; 中国湖北省武汉市 经济技术开发区东风大道888号 No.888, Dongfeng Avenue, Economic & Technology Development Zone, Wuhan, Hubei 430000, CN
珠海格力电器股份有限公司 GREE ELECTRIC APPLIANCES, INC. OF ZHUHAI [CN/CN]; 中国广东省珠海市 前山金鸡西路 West Jinji Road, Qianshan, Zhuhai, Guangdong 519070, CN
Inventors:
肖婷 XIAO, Ting; CN
何昌 HE, Chang; CN
史波 SHI, Bo; CN
Agent:
广州华进联合专利商标代理有限公司 ADVANCE CHINA IP LAW OFFICE; 中国广东省广州市天河区珠江东路6号4501房 (部位:自编01-03和08-12单元)(仅限办公用途) Room 4501, No. 6 Zhujiang East Road, Tianhe District, Guangzhou Guangdong 510623, CN
Priority Data:
201710667268.407.08.2017CN
Title (EN) TRENCH GATE IGBT AND MANUFACTURING METHOD THEREFOR
(FR) IGBT À GRILLE EN TRANCHÉE ET SON PROCÉDÉ DE FABRICATION
(ZH) 沟槽栅IGBT及其制作方法
Abstract:
(EN) Disclosed in the present application are a trench gate IGBT and a manufacturing method therefor. A contact region is provided on a first trench gate of a trench gate IGBT; when an isolation layer is formed, only a portion of the isolation layer corresponding to a first contact region is etched and hollowed out, and portions of the isolation layer corresponding to other regions of the first trench gate do not required to be etched and hollowed out. Therefore, the high quality of a contact portion between the top edge of the first trench gate and the surface of a substrate structure of the trench gate is ensured; the problem that the trench gate IGBT is prone to electric leakage is improved; and the reliability of the trench gate IGBT is increased. In addition, the trench gate IGBT provided by the present application does not require an increase of the spacing between adjacent trench gates, so the density of the trench gates of the trench gate IGBT can be optimized to a higher density, thereby ensuring a higher saturation current density of the trench gate IGBT.
(FR) La présente invention concerne un IGBT à grille en tranchée et son procédé de fabrication. Une région de contact est disposée sur une première grille en tranchée d'un IGBT à grille en tranchée ; lorsqu'une couche d'isolation est formée, seule une partie de la couche d'isolation correspondant à une première région de contact est gravée et creusée, et des parties de la couche d'isolation correspondant à d'autres régions de la première grille en tranchée n'ont pas besoin d'être gravées et évidées. Par conséquent, la haute qualité d'une partie de contact entre le bord supérieur de la première grille en tranchée et la surface d'une structure de substrat de la grille en tranchée est garantie ; le problème selon lequel l'IGBT à grille en tranchée est sujet à une fuite électrique est amélioré ; et la fiabilité de l'IGBT à grille en tranchée est augmentée. De plus, l'IGBT à grille en tranchée proposé par la présente invention ne nécessite pas une augmentation de l'espacement entre des grilles en tranchée adjacentes, de sorte que la densité des grilles en tranchée de l'IGBT à grille en tranchée peut être optimisée à une densité plus élevée, ce qui permet de garantir une densité de courant de saturation supérieure de l'IGBT à grille en tranchée.
(ZH) 本申请公开了一种沟槽栅IGBT及其制作方法,在沟槽栅IGBT的第一沟槽栅上设置一接触区,在制作隔离层时仅仅对隔离层对应该第一接触区的部分进行刻蚀挖空,而无需对隔离层对应第一沟槽栅其他区域的部分进行刻蚀挖空处理,保证第一沟槽栅的顶面边缘与沟槽栅衬底结构的表面接触部分质量较高,改善沟槽栅IGBT容易出现漏电的问题,提高其可靠性。此外,本申请提供的沟槽栅IGBT无需增加相邻沟槽栅之间的间距,因而沟槽栅IGBT的沟槽栅的密度可以优化为较大的密度,保证沟槽栅IGBT的饱和电流密度较高。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)