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1. (WO2019029237) WAFER BONDING METHOD AND STRUCTURE THEREOF
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/029237 International Application No.: PCT/CN2018/088954
Publication Date: 14.02.2019 International Filing Date: 30.05.2018
IPC:
H01L 21/02 (2006.01) ,H01L 21/50 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
Applicants:
YANGTZE MEMORY TECHNOLOGIES CO., LTD. [CN/CN]; Room 7018, No.18, Huaguang Road, Guandong Science and Technology Industrial Park East Lake High-Tech Development Zone Wuhan, Hubei 430074, CN
Inventors:
GUO, Shuai; CN
WANG, Jiawen; CN
DING, Taotao; CN
XING, Ruiyuan; CN
WANG, Xiaojin; CN
WANG, Jiayou; CN
LI, Chunlong; CN
Agent:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD.; 10th Floor, Tower C, Beijing Global Trade Center 36 North Third Ring Road East, Dongcheng District Beijing 100013, CN
Priority Data:
201710681131.410.08.2017CN
Title (EN) WAFER BONDING METHOD AND STRUCTURE THEREOF
(FR) PROCÉDÉ DE LIAISON DE TRANCHE ET STRUCTURE ASSOCIÉE
Abstract:
(EN) Embodiments of wafer bonding method and structures thereof are disclosed. The wafer bonding method can include performing a plasma activation treatment on a front surface of a first and a front surface of a second wafer; performing a silica sol treatment on the front surfaces of the first and the second wafers; performing a preliminary bonding process of the first and second wafer; and performing a heat treatment of the first and the second wafers to bond the front surface of the first wafer to the front surface of the second wafers.
(FR) L'invention concerne des modes de réalisation d'un procédé de liaison de tranches et des structures de celles-ci. Le procédé de liaison de tranche peut comprendre la réalisation d'un traitement d'activation de plasma sur une surface avant d'une première et d'une surface avant d'une seconde tranche; la réalisation d'un traitement de sol de silice sur les surfaces avant des première et seconde tranches; la réalisation d'un processus de liaison préliminaire de la première et de la seconde tranche; et la réalisation d'un traitement thermique des première et seconde tranches pour lier la surface avant de la première tranche à la surface avant des secondes tranches.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)