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1. (WO2019029170) LIGHT-EMITTING DEVICE AND FABRICATION METHOD THEREFOR
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/029170 International Application No.: PCT/CN2018/081668
Publication Date: 14.02.2019 International Filing Date: 03.04.2018
IPC:
H01L 33/22 (2010.01) ,H01L 33/44 (2010.01) ,H01L 33/00 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
20
with a particular shape, e.g. curved or truncated substrate
22
Roughened surfaces, e.g. at the interface between epitaxial layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44
characterised by the coatings, e.g. passivation layer or anti-reflective coating
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Applicants:
厦门三安光电有限公司 XIAMEN SAN'AN OPTOELECTRONICS CO., LTD. [CN/CN]; 中国福建省厦门市 同安区洪塘镇民安大道841-899号 No.841-899, Min An Road, Hongtang Town, Tongan District Xiamen, Fujian 361100, CN
Inventors:
黄森鹏 HUANG, Senpeng; CN
林振端 LIN, Zhen-duan; CN
黄永特 WONG, Weng-Tack; CN
时军朋 SHI, Junpeng; CN
陈顺意 CHEN, Shunyi; CN
赵志伟 CHAO, Chih-wei; CN
徐宸科 HSU, Chen-ke; CN
Priority Data:
201710685818.511.08.2017CN
Title (EN) LIGHT-EMITTING DEVICE AND FABRICATION METHOD THEREFOR
(FR) DISPOSITIF ÉLECTROLUMINESCENT ET SON PROCÉDÉ DE FABRICATION
(ZH) 一种发光装置及其制造方法
Abstract:
(EN) Disclosed in the present invention are a light-emitting device and a fabrication method therefor, comprising: providing: a light-emitting diode (LED) chip, which has a first surface, a second surface opposite to the first surface, and a plurality of side surfaces between the first surface and the second surface, and which has a plurality of corners connecting the second surface and two surfaces of the plurality of side surfaces, a pair of electrodes being disposed on the side of the second surface, and the side surfaces having a rough structure; a transparent material layer, completely covering the plurality of side surfaces of the LED chip except for the electrodes without exposing the plurality of the corners; and a retroreflective material layer, surrounding the periphery of the transparent material layer, wherein the side surfaces of the LED chip have a rough structure used for increasing the area of contact between the side surfaces of the chip and the transparent material layer, thereby enhancing the compatibility of the chip to transparent materials and improving the wettability of the transparent materials on the side surfaces of the chip, and further enabling the transparent material layer to completely cover the side surfaces of the chip.
(FR) La présente invention concerne un dispositif électroluminescent et son procédé de fabrication, consistant : à fournir : une puce de diode électroluminescente (DEL), qui a une première surface, une seconde surface opposée à la première surface, et une pluralité de surfaces latérales entre la première surface et la seconde surface, et qui a une pluralité de coins reliant la seconde surface et deux surfaces de la pluralité de surfaces latérales, une paire d'électrodes étant disposée sur le côté de la seconde surface, et les surfaces latérales ayant une structure rugueuse ; une couche de matériau transparent, recouvrant complètement la pluralité de surfaces latérales de la puce de DEL à l'exception des électrodes sans exposer la pluralité des coins ; et une couche de matériau rétroréfléchissant, entourant la périphérie de la couche de matériau transparent, les surfaces latérales de la puce de DEL ayant une structure rugueuse destinée à augmenter la zone de contact entre les surfaces latérales de la puce et la couche de matériau transparent, améliorant ainsi la compatibilité de la puce avec des matériaux transparents et améliorant la mouillabilité des matériaux transparents sur les surfaces latérales de la puce, et permettant en outre à la couche de matériau transparent de recouvrir complètement les surfaces latérales de la puce.
(ZH) 本发明公开了一种发光装置及其制造方法,包括:提供一LED芯片,具有第一面、与所述第一面相对的第二面、在所述第一面与所述第二面之间的多个侧面,并且具有多个所述第二面和所述多个侧面中的两个面相接的角部,在所述第二面侧具有一对电极,所述侧面具有粗糙结构;透明材料层,完全包覆所述LED芯片除电极之外的多个侧面,且不露出多个所述角部;反光材料层,包围所述透明材料层外围,所述LED芯片侧面具有粗糙结构,用以增大芯片侧面与所述透明材料层的接触面积,从而增强芯片对透明材料的亲和性,提高透明材料在芯片侧面的润湿性能,进而使得透明材料层能够完全覆盖芯片侧表面。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)