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1. (WO2019029009) THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, AND LIQUID CRYSTAL DISPLAY PANEL
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/029009 International Application No.: PCT/CN2017/106975
Publication Date: 14.02.2019 International Filing Date: 20.10.2017
IPC:
H01L 29/786 (2006.01) ,H01L 21/336 (2006.01) ,G02F 1/1368 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136
Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362
Active matrix addressed cells
1368
in which the switching element is a three-electrode device
Applicants:
武汉华星光电半导体显示技术有限公司 WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. [CN/CN]; 中国湖北省武汉市 东湖新技术开发区高新大道666号光谷生物创新园C5栋305室 305 Room, Building C5, Biolake of Optics Valley No.666 Gaoxin Avenue, Wuhan East Lake High-Tech Development Zone Wuhan, Hubei 430000, CN
Inventors:
李松杉 LI, Songshan; CN
Agent:
深圳市威世博知识产权代理事务所(普通合伙) CHINA WISPRO INTELLECTUAL PROPERTY LLP.; 中国广东省深圳市 南山区高新区粤兴三道8号中国地质大学产学研基地中地大楼A806 Room A806, Zhongdi Building, China University of Geosciences Base, No.8 Yuexing 3rd Road High-Tech Industrial Estate, Nanshan District Shenzhen, Guangdong 518057, CN
Priority Data:
201710669995.407.08.2017CN
Title (EN) THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, AND LIQUID CRYSTAL DISPLAY PANEL
(FR) TRANSISTOR À COUCHES MINCES, SON PROCÉDÉ DE FABRICATION ET PANNEAU D'AFFICHAGE À CRISTAUX LIQUIDES
(ZH) 薄膜晶体管及薄膜晶体管的制造方法、液晶显示面板
Abstract:
(EN) A thin film transistor, a method for manufacturing the thin film transistor, and a liquid crystal display panel. The thin film transistor (100) comprises: a substrate (110); a grid layer (120), provided on the substrate; an insulation layer (130), covering the grid layer; a semiconductor layer (140), provided on the insulation layer; a conductor layer (150), provided on the semiconductor layer; a source/drain layer (170), provided on the conductor layer and the insulation layer, a conductor layer or a conductive spacer (160) being provided between the source/drain layer and the semiconductor layer; and a passivation layer (180), provided on the insulation layer, the source/drain layer, and the semiconductor layer. The thin film transistor is low in leakage current and high in quality.
(FR) L'invention concerne un transistor à couches minces, un procédé de fabrication du transistor à couches minces, et un panneau d'affichage à cristaux liquides. Le transistor à couches minces (100) comprend : un substrat (110); une couche de grille (120), disposée sur le substrat; une couche d'isolation (130), recouvrant la couche de grille; une couche semi-conductrice (140), disposée sur la couche d'isolation; une couche conductrice (150), disposée sur la couche semi-conductrice; une couche de source/drain (170), disposée sur la couche conductrice et la couche d'isolation, une couche conductrice ou un espaceur conducteur (160) étant disposé entre la couche de source/drain et la couche semi-conductrice; et une couche de passivation (180), disposée sur la couche d'isolation, la couche de source/drain et la couche semi-conductrice. Le transistor à couches minces présente un faible courant de fuite et une qualité élevée.
(ZH) 一种薄膜晶体管、薄膜晶体管的制造方法及液晶显示面板,其中薄膜晶体管(100)包括:基板(110);栅极层(120),设置在基板上;绝缘层(130),覆盖于栅极层;半导体层(140),设置在绝缘层上;导体层(150),设置在半导体层上;源漏极层(170),设置在导体层和绝缘层上,在源漏极层和半导体层之间设置有导体层或者导电间隔部(160);钝化层(180),设置在绝缘层、源漏极层和半导体层上。该薄膜晶体管中漏电流较小,薄膜晶体管质量较高。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)
Also published as:
US20190043995