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1. (WO2019028054) A BI-FUNCTIONAL LEWIS BASE ADDITIVE FOR MICROSCOPIC HOMOGENEITY IN PEROVSKITE SOLAR CELLS
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Pub. No.: WO/2019/028054 International Application No.: PCT/US2018/044658
Publication Date: 07.02.2019 International Filing Date: 31.07.2018
IPC:
H01L 31/032 (2006.01) ,H01L 31/04 (2006.01) ,H01L 31/18 (2006.01) ,H01L 31/0256 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0256
characterised by the material
0264
Inorganic materials
032
including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272-H01L31/0312154
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0256
characterised by the material
Applicants:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US/US]; 1111 Franklin Street 12th Floor Oakland, California 94607-5200, US
Inventors:
YANG, Yang; US
LEE, Jin-Wook; US
HAN, Tae-Hee; US
Agent:
DALEY, Henry J.; US
Priority Data:
62/539,38931.07.2017US
Title (EN) A BI-FUNCTIONAL LEWIS BASE ADDITIVE FOR MICROSCOPIC HOMOGENEITY IN PEROVSKITE SOLAR CELLS
(FR) ADDITIF DE BASE DE LEWIS BIFONCTIONNEL POUR UNE HOMOGÉNÉITÉ MICROSCOPIQUE DANS DES CELLULES SOLAIRES DE PÉROVSKITE
Abstract:
(EN) A precursor composition for producing a perovskite active layer of a photovoltaic device is disclosed herein. The composition includes a first component comprising a plurality of first molecules of a perovskite structure to be formed by an adduct combination; a second component comprising a plurality of second molecules of the perovskite structure to be formed by the adduct combination; and a nonvolatile Lewis base. The nonvolatile base is nonvolatile above a first temperature and below a second temperature, the second temperature being greater than the first temperature. The perovskite active layer can be used to produce a photovoltaic device.
(FR) La présente invention concerne une composition de précurseur permettant de produire une couche active de pérovskite d'un dispositif photovoltaïque. La composition comprend un premier composant comprenant une pluralité de premières molécules d'une structure pérovskite à former par une combinaison de produits d'addition; un second composant comprenant une pluralité de secondes molécules de la structure pérovskite à former par la combinaison de produits d'addition; et une base de Lewis non volatile. La base non volatile est non volatile au-dessus d'une première température et en dessous d'une seconde température, la seconde température étant supérieure à la première température. La couche active de pérovskite peut être utilisée pour produire un dispositif photovoltaïque.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)