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1. (WO2019027820) NANOPOROUS MICRO-LED DEVICES AND METHODS FOR MAKING
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Pub. No.: WO/2019/027820 International Application No.: PCT/US2018/044023
Publication Date: 07.02.2019 International Filing Date: 27.07.2018
IPC:
H01L 33/50 (2010.01) ,H01L 33/00 (2010.01) ,H01L 33/06 (2010.01) ,H01L 33/48 (2010.01) ,H01L 33/54 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
50
Wavelength conversion elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
06
within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
52
Encapsulations
54
having a particular shape
Applicants:
YALE UNIVERSITY [US/US]; Two Whitney Avenue New Haven, Connecticut 06511, US
Inventors:
HAN, Jung; US
LIN, Chia-Feng; TW
Agent:
DOYLE, Kathryn; US
ARNOLD, Gianna Julian; US
BROWNING, Elizabeth A.; US
CROTTY, Justin W.; US
EDDE, Chantal; US
KUO, Joseph; US
LANDRY, Brian R.; US
LAURO, Peter C.; US
MANAS, Michael G.; US
PLEHN-DUJOWICH, Debora; US
SILVA, Domingos J.; US
SIMPSON, Mark D.; US
TRUJILLO, Doreen Y.; US
YOUNG, Jacque C.; US
Priority Data:
62/538,99431.07.2017US
Title (EN) NANOPOROUS MICRO-LED DEVICES AND METHODS FOR MAKING
(FR) DISPOSITIFS NANOPOREUX À MICRO-DEL ET LEURS PROCÉDÉS DE FABRICATION
Abstract:
(EN) The present invention provides LED devices comprising gallium nitride LED diodes, at least a portion of which have been modified with color-converting quantum dots. The invention also provides methods of fabricating the LED devices of the invention.
(FR) La présente invention concerne des dispositifs à DEL comprenant des diodes DEL au nitrure de gallium, dont au moins une partie a été modifiée avec des points quantiques de conversion de couleur. L'invention porte également sur des procédés de fabrication des dispositifs à DEL de l'invention.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)