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1. (WO2019027702) PUF WITH DISSOLVABLE CONDUCTIVE PATHS
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Pub. No.: WO/2019/027702 International Application No.: PCT/US2018/043139
Publication Date: 07.02.2019 International Filing Date: 20.07.2018
IPC:
H04L 9/32 (2006.01) ,G06F 12/14 (2006.01) ,G09C 1/00 (2006.01)
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
L
TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
9
Arrangements for secret or secure communication
32
including means for verifying the identity or authority of a user of the system
G PHYSICS
06
COMPUTING; CALCULATING; COUNTING
F
ELECTRIC DIGITAL DATA PROCESSING
12
Accessing, addressing or allocating within memory systems or architectures
14
Protection against unauthorised use of memory
G PHYSICS
09
EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
C
CIPHERING OR DECIPHERING APPARATUS FOR CRYPTOGRAPHIC OR OTHER PURPOSES INVOLVING THE NEED FOR SECRECY
1
Apparatus or methods whereby a given sequence of signs, e.g. an intelligible text, is transformed into an unintelligible sequence of signs by transposing the signs or groups of signs or by replacing them by others according to a predetermined system
Applicants:
ARIZONA BOARD OF REGENTS ON BEHALF OF NORTHERN ARIZONA UNIVERSITY [US/US]; P.O. Box 4087 Flagstaff, AZ 86011, US
Inventors:
CAMBOU, Bertrand Francis; US
CHIPANA QUISPE, Raul; US
HABIB, Bilal; US
Agent:
MILHOLLIN, Andrew C.; US
Priority Data:
62/541,00503.08.2017US
Title (EN) PUF WITH DISSOLVABLE CONDUCTIVE PATHS
(FR) PUF À TRAJETS CONDUCTEURS SOLUBLES
Abstract:
(EN) The generation of "fingerprints", also called challenge-response pairs (CRPs) of Physically Unclonable Functions (PUFs), can often stress electronic components, leaving behind traces that can be exploited by crypto-analysts. A non-intrusive method to generate CRPs based on Resistive RAMs may instead be used, which does not disturb the memory cells. The injection of small electric currents (magnitude of nanoAmperes) in each cell causes the resistance of each cell to drop abruptly by several orders of magnitudes through the formation of temporary conductive paths in each cell. A repeated injection of currents into the same cell, results in an almost identical effect in resistance drop for a single cell. However, due to the small physical variations which occur during manufacturing, the cells are significantly different from each other, in such a way that a group of cells can be used as a basis for PUF authentication.
(FR) Selon l'invention, la génération d'"empreintes digitales", également appelées paires défi-réponse (CRP) de fonctions physiquement non clonables (PUF), peut souvent solliciter des composants électroniques, laissant des traces qui peuvent être exploitées par des crypto-analystes. Un procédé non intrusif pour générer des CRP sur la base de mémoires vives (RAM) résistives peut plutôt être utilisé, ce qui ne perturbe pas les cellules de mémoire. L'injection de faibles courants électriques (magnitude de nano-ampères) dans chaque cellule provoque la chute brusque de la résistance de chaque cellule selon plusieurs ordres de grandeur par la formation de trajets conducteurs temporaires dans chaque cellule. Une injection répétée de courants dans la même cellule permet d'obtenir un effet presque identique dans la chute de résistance pour une cellule unique. Cependant, en raison des petites variations physiques qui surviennent pendant la fabrication, les cellules sont significativement différentes les unes des autres, de telle sorte qu'un groupe de cellules peut être utilisé comme base pour une authentification de PUF.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)