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1. (WO2019027645) MONO- AND MULTILAYER SILICENE PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION
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Pub. No.: WO/2019/027645 International Application No.: PCT/US2018/041749
Publication Date: 07.02.2019 International Filing Date: 12.07.2018
IPC:
H01L 21/02 (2006.01) ,H01L 21/324 (2006.01) ,C23C 16/455 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324
Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Applicants:
THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY [US/US]; Naval Research Laboratory 875 North Randolph Street, Suite 1425 Arlington, VA 22203, US
Inventors:
LIU, Xiao; US
JUGDERSUREN, Battogtokh; US
Agent:
BROOME, Kerry, L.; US
Priority Data:
62/541,12504.08.2017US
Title (EN) MONO- AND MULTILAYER SILICENE PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION
(FR) SILICÈNE MONO- ET MULTICOUCHE PRÉPARÉ PAR DÉPÔT CHIMIQUE EN PHASE VAPEUR ASSISTÉ PAR PLASMA
Abstract:
(EN) Processes for fabricating multi- and monolayer silicene on catalyst metal surfaces by means of plasma-enhanced chemical vapor deposition (PECVD). Silicene is grown by means of PECVD from a starting mixture of H2 and SiH4 having an H2: SiH4 ratio of 100 to 400 on an Ag(111) substrate having a substrate temperature between 20 °C and 290 °C, with the deposition being performed for about 10-25 minutes at an RF power between 10W and 500W and under a chamber pressure between about 100 mTorr and 1300 mTorr. In most cases, the substrate will be in the form of an Ag(111) film sputtered on a fused silica substrate. A multi-layer silicene film can be formed by extending the deposition time past 25 minutes.
(FR) Cette invention concerne des procédés de fabrication de silicène multi- et monocouche sur des surfaces métalliques de catalyseur par dépôt chimique en phase vapeur assisté par plasma (PECVD). Le silicène est développé par PECVD à partir d'un mélange de départ de H2 et de SiH4 ayant un rapport H2:SiH4 de 100 à 400 sur un substrat d'Ag(111) ayant une température de substrat comprise entre 20 °C et 290 °C, le dépôt étant effectué pendant environ 10 à 25 minutes à une puissance RF comprise entre 10W et 500W et sous une pression de chambre comprise entre environ 100 mTorr et 1300 mTorr. Dans la plupart des cas, le substrat se présente sous la forme d'un film d'Ag(111) pulvérisé sur un substrat de silice fondue. Un film de silicène multicouche peut être formé par prolongation du temps de dépôt au-delà de 25 minutes.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)