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1. (WO2019027604) FIELD EFFECT SENSORS
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/027604 International Application No.: PCT/US2018/040439
Publication Date: 07.02.2019 International Filing Date: 29.06.2018
IPC:
G01N 27/414 (2006.01) ,G01N 33/543 (2006.01) ,B82Y 15/00 (2011.01) ,B82Y 40/00 (2011.01)
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27
Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
26
by investigating electrochemical variables; by using electrolysis or electrophoresis
403
Cells and electrode assemblies
414
Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
33
Investigating or analysing materials by specific methods not covered by groups G01N1/-G01N31/131
48
Biological material, e.g. blood, urine; Haemocytometers
50
Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
53
Immunoassay; Biospecific binding assay; Materials therefor
543
with an insoluble carrier for immobilising immunochemicals
B PERFORMING OPERATIONS; TRANSPORTING
82
NANO-TECHNOLOGY
Y
SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES
15
Nano-technology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
B PERFORMING OPERATIONS; TRANSPORTING
82
NANO-TECHNOLOGY
Y
SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES
40
Manufacture or treatment of nano-structures
Applicants:
ILLUMINA, INC. [US/US]; 5200 Illumina Way San Diego, California 92122, US
Inventors:
BOYANOV, Boyan; US
Agent:
DIERKER, Julia Church; US
KAVANAUGH, Juliet R.; US
Priority Data:
62/539,81301.08.2017US
Title (EN) FIELD EFFECT SENSORS
(FR) CAPTEURS À EFFET DE CHAMP
Abstract:
(EN) Apparatus and methods are disclosed for single molecule field effect sensors having conductive channels functionalized with a single active moiety. A region of a nanostructure (e.g., such as a silicon nanowire or a carbon nanotube) provide the conductive channel. Trapped state density of the nanostructure is modified for a portion of the nanostructure in proximity with a location where the active moiety is linked to the nanostructure. In one example, the semiconductor device includes a source, a drain, a channel including a nanostructure having a modified portion with an increased trap state density, the modified portion being further functionalized with an active moiety. A gate terminal is in electrical communication with the nanostructure. As a varying electrical signal is applied to an ionic solution in contact with the nanostructure channel, changes in current observed from the semiconductor device can be used to identify composition of the analyte.
(FR) L'invention concerne un appareil et des procédés pour des capteurs à effet de champ à une seule molécule ayant des canaux conducteurs fonctionnalisés avec une seule fraction active. Une région d'une nanostructure (par exemple, telle qu'un nanofil de silicium ou un nanotube de carbone) forme le canal conducteur. La densité d'états piégés de la nanostructure est modifiée sur une partie de la nanostructure à proximité d'un site où la fraction active est liée à la nanostructure. Dans un exemple, le dispositif semiconducteur comprend une source, un drain, un canal comprenant une nanostructure ayant une partie modifiée avec une densité d'états piégés accrue, la partie modifiée étant en outre fonctionnalisée avec une fraction active. Une borne de grille est en communication électrique avec la nanostructure. Lorsqu'un signal électrique variable est appliqué à une solution ionique en contact avec le canal à nanostructure, des changements de courant observés sur le dispositif semiconducteur peuvent être utilisés pour identifier la composition de l'analyte.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)