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1. (WO2019027541) THREE-DIMENSIONAL MEMORY DEVICE EMPLOYING DIRECT SOURCE CONTACT AND HOLE CURRENT DETECTION AND METHOD OF MAKING THE SAME
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Pub. No.: WO/2019/027541 International Application No.: PCT/US2018/034388
Publication Date: 07.02.2019 International Filing Date: 24.05.2018
IPC:
H01L 29/66 (2006.01) ,H01L 29/739 (2006.01) ,H01L 27/1157 (2017.01) ,H01L 27/11582 (2017.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
72
Transistor-type devices, i.e. able to continuously respond to applied control signals
739
controlled by field effect
[IPC code unknown for H01L 27/1157][IPC code unknown for ERROR IPC Code incorrect: invalid subgroup (0=>999999)!]
Applicants:
SANDISK TECHNOLOGIES LLC [US/US]; 5080 Spectrum Drive Suite 1050W Addison, Texas 75001, US
Inventors:
SAKAKIBARA, Kiyohiko; US
SHIMIZU, Satoshi; US
NORIZUKI, Naoto; US
Agent:
RADOMSKY, Leon; US
COHN, Joanna; US
CONNOR, David; US
GAYOSO, Tony; US
GEMMELL, Elizabeth; US
GILL, Matthew; US
GREGORY, Shaun; US
GUNNELS, Zarema; US
HANSEN, Robert; US
HUANG, Stephen; US
HYAMS, David; US
JOHNSON, Timothy; US
MAZAHERY, Benjamin; US
MURPHY, Timothy; US
NGUYEN, Jacqueline; US
O'BRIEN, Michelle; US
PARK, Byeongju; US
RUTT, Steven; US
SIMON, Phyllis; US
SMITH, Jackson R.; US
SULSKY, Martin; US
Priority Data:
15/669,24304.08.2017US
Title (EN) THREE-DIMENSIONAL MEMORY DEVICE EMPLOYING DIRECT SOURCE CONTACT AND HOLE CURRENT DETECTION AND METHOD OF MAKING THE SAME
(FR) DISPOSITIF DE MÉMOIRE TRIDIMENSIONNEL FAISANT APPEL À UN CONTACT DE SOURCE DIRECTE ET À UNE DÉTECTION DE COURANT DE TROUS, ET SON PROCÉDÉ DE FABRICATION
Abstract:
(EN) A three-dimensional memory device includes a p-doped source semiconductor layer located over a substrate, a p-doped strap semiconductor layer located over the p-doped source semiconductor layer, an alternating stack of electrically conductive layers and insulating layers located over the p-doped strap semiconductor layer, and memory stack structures that extend through the alternating stack and into an upper portion of the p-doped source semiconductor layer. Each memory stack structure includes a p-doped vertical semiconductor channel and a memory film laterally surrounding the p-doped vertical semiconductor channel. A top surface of each p-doped vertical semiconductor channel contacts a bottom surface of a respective n-doped region. A sidewall of a bottom portion of each p-doped vertical semiconductor channel contacts a respective sidewall of the p-doped strap semiconductor layer.
(FR) La présente invention concerne un dispositif de mémoire tridimensionnel pourvu d'une couche semi-conductrice de source dopée p située sur un substrat, d'une couche semi-conductrice de bande dopée p située sur la couche semi-conductrice de source dopée p, d'un empilement alterné de couches électriquement conductrices et de couches isolantes situées sur la couche semi-conductrice de bande dopée p, et de structures d'empilement de mémoire qui s'étendent à travers l'empilement alterné et dans une partie supérieure de la couche semi-conductrice de source dopée p. Chaque structure d'empilement de mémoire est dotée d'un canal semi-conducteur vertical dopé p et d'un film de mémoire entourant latéralement le canal semi-conducteur vertical dopé p. Une surface supérieure de chaque canal semi-conducteur vertical dopé p est en contact avec une surface inférieure d'une région dopée n respective. Une paroi latérale d'une partie inférieure de chaque canal semi-conducteur vertical dopé p est en contact avec une paroi latérale respective de la couche semi-conductrice de bande dopée p.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)