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1. (WO2019027268) PIEZOELECTRIC MATERIAL COLUMN AND MANUFACTURING METHOD THEREFOR
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Pub. No.: WO/2019/027268 International Application No.: PCT/KR2018/008779
Publication Date: 07.02.2019 International Filing Date: 02.08.2018
IPC:
H01L 41/333 (2013.01) ,H01L 41/39 (2013.01) ,H01L 41/187 (2006.01) ,H01L 21/56 (2006.01) ,H01L 41/43 (2013.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22
Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
33
Shaping or machining of piezo-electric or electrostrictive bodies
333
by moulding or extrusion
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22
Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
35
Forming piezo-electric or electrostrictive materials
39
Inorganic materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16
Selection of materials
18
for piezo-electric or electrostrictive elements
187
Ceramic compositions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
56
Encapsulations, e.g. encapsulating layers, coatings
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22
Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
35
Forming piezo-electric or electrostrictive materials
39
Inorganic materials
43
by sintering
Applicants:
㈜포인트엔지니어링 POINT ENGINEERING CO., LTD. [KR/KR]; 충청남도 아산시 둔포면 아산밸리로 89 89, Asanvalley-ro, Dunpo-myeon Asan-si Chungcheongnam-do 31409, KR
Inventors:
김경국 KIM, Kyoung Kook; KR
김시원 KIM, Si Won; KR
노범래 NOH, Beom Rae; KR
조지연 JO, Ji Yeon; KR
최희정 CHOI, Hee Jung; KR
추은경 CHU, Eun Kyung; KR
안범모 AHN, Bum Mo; KR
박승호 PARK, Seung Ho; KR
Agent:
최광석 CHOI, Kwang Seok; KR
Priority Data:
10-2017-009919004.08.2017KR
10-2017-009919704.08.2017KR
Title (EN) PIEZOELECTRIC MATERIAL COLUMN AND MANUFACTURING METHOD THEREFOR
(FR) COLONNE DE MATÉRIAU PIÉZOÉLECTRIQUE ET SON PROCÉDÉ DE FABRICATION
(KO) 압전 소재 기둥 및 그 제조방법
Abstract:
(EN) The present invention relates to: a piezoelectric material column characterized in that the sintering density at one end portion of a sintered piezoelectric material column is higher than the sintering density at the other end portion thereof; and a piezoelectric material column manufacturing method comprising a mold preparation step of preparing a mold having a plurality of filling holes, a filling step of filling, by means of high gas spray pressure, the filling holes of the mold from the bottom surfaces thereof with particles of a piezoelectric material, and a sintering step of quickly and thermally treating the piezoelectric material filled in the filling holes of the mold and sintering the same.
(FR) La présente invention concerne : une colonne de matériau piézoélectrique caractérisée en ce que la densité de frittage au niveau d'une première partie d'extrémité d'une colonne de matériau piézoélectrique fritté est supérieure à la densité de frittage au niveau de son autre partie d'extrémité ; et un procédé de fabrication de colonne de matériau piézoélectrique comprenant une étape de préparation de moule consistant à préparer un moule ayant une pluralité de trous de remplissage, une étape de remplissage consistant à remplir, au moyen d'une haute pression de pulvérisation de gaz, les trous de remplissage du moule à partir de ses surfaces inférieures avec des particules d'un matériau piézoélectrique, et une étape de frittage consistant à traiter rapidement et thermiquement le matériau piézoélectrique remplissant les trous de remplissage du moule et à le fritter.
(KO) 본 발명은 소결된 압전 소재 기둥의 일측 단부에서의 소결밀도가 타측 단부에서의 소결밀도보다 높은 것을 특징으로 하는 압전 소재 기둥 및 복수개의 충진홀이 구비된 몰드를 준비하는 몰드 준비 단계, 고압의 가스 분사압으로 압전 소재의 입자를 상기 몰드의 충진홀의 바닥면에서부터 충진하는 충진 단계 및 상기 몰드의 충진홀에 충진된 상기 압전 소재를 급속 열처리하여 소결하는 소결 단계를 포함하는 것을 특징으로 하는 압전 소재 기둥의 제조 방법에 관한 것이다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)