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1. (WO2019027181) POSITIVE TYPE PHOTORESIST COMPOSITION, PATTERN MANUFACTURED THEREFROM, AND METHOD FOR MANUFACTURING PATTERN
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Pub. No.: WO/2019/027181 International Application No.: PCT/KR2018/008431
Publication Date: 07.02.2019 International Filing Date: 25.07.2018
IPC:
G03F 7/039 (2006.01) ,G03F 7/033 (2006.01) ,G03F 7/027 (2006.01) ,G03F 7/004 (2006.01) ,G03F 7/00 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
027
Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
032
with binders
033
the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
027
Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
Applicants:
주식회사 엘지화학 LG CHEM, LTD. [KR/KR]; 서울시 영등포구 여의대로 128 128,Yeoui-daero Yeongdeungpo-gu Seoul 07336, KR
Inventors:
임민영 LIM, Min Young; KR
이태섭 LEE, Tae Seob; KR
김지혜 KIM, Ji Hye; KR
Agent:
유미특허법인 YOU ME PATENT AND LAW FIRM; 서울시 강남구 테헤란로 115 115 Teheran-ro Gangnam-gu Seoul 06134, KR
Priority Data:
10-2017-009728031.07.2017KR
Title (EN) POSITIVE TYPE PHOTORESIST COMPOSITION, PATTERN MANUFACTURED THEREFROM, AND METHOD FOR MANUFACTURING PATTERN
(FR) COMPOSITION DE RÉSINE PHOTOSENSIBLE DE TYPE POSITIF, MOTIF FABRIQUÉ À PARTIR DE CETTE DERNIÈRE, ET PROCÉDÉ DE FABRICATION DE MOTIF
(KO) 포지티브형 포토레지스트 조성물, 이로부터 제조되는 패턴, 및 패턴 제조방법
Abstract:
(EN) The present invention is to provide a positive type photoresist composition having excellent storage stability, sensitivity, developing property, resistance to a plating liquid, and heat resistance. More specifically, an oligomer-type particular dissolution inhibitor, which has the same repeating unit structure as a resin contained in the photoresist composition, is applied to the composition.
(FR) La présente invention concerne une composition de résine photosensible de type positif présentant une excellente stabilité au stockage, une sensibilité, une propriété de développement, une résistance à un liquide de placage et une résistance à la chaleur. Plus spécifiquement, un inhibiteur de dissolution particulier de type oligomère, présentant la même structure unitaire de répétition qu'une résine contenue dans la composition de résine photosensible, est appliqué à la composition.
(KO) 본 발명은 저장 안정성, 감도, 현상성, 도금액 내성 및 내열성이 우수한 포지티브형 포토레지스트 조성물을 제공하기 위한 것이다. 보다 상세하게는, 포토레지스트 조성물 내에 포함되는 수지와 동일한 반복 단위 구조를 가지는, 올리고머 형태의 특정 용해 억제제를 상기 조성물에 적용한다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)