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1. (WO2019027129) PLASMA ETCHING METHOD USING IMPRINTED MICROPATTERN
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/027129 International Application No.: PCT/KR2018/005616
Publication Date: 07.02.2019 International Filing Date: 16.05.2018
IPC:
H01L 21/3065 (2006.01) ,G03F 7/00 (2006.01) ,H01L 21/027 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
Applicants:
주식회사 기가레인 GIGALANE CO., LTD. [KR/KR]; 경기도 화성시 삼성1로5길 46 (석우동) (Seoku-dong)46, Samsung 1-ro 5-gil Hwaseong-si Gyeonggi-do 18449, KR
주식회사 파버나인코리아 PAVONINEKOREA, INC. [KR/KR]; 인천시 연수구 갯벌로 53(송도동) (Songdo-dong)53, Gaetbeol-ro, Yeonsu-gu Incheon 21999, KR
Inventors:
이성중 LEE, Sung Jung; KR
김민중 KIM, Min Jung; KR
구자붕 GU, Ja Bung; KR
권상민 KWON, Sang Min; KR
Priority Data:
10-2017-009763101.08.2017KR
Title (EN) PLASMA ETCHING METHOD USING IMPRINTED MICROPATTERN
(FR) PROCÉDÉ DE GRAVURE AU PLASMA UTILISANT UN MICROMOTIF IMPRIMÉ
(KO) 임프린트된 미세 패턴을 이용한 플라즈마 에칭 방법
Abstract:
(EN) The present invention provides a plasma etching method using an imprinted micropattern, the method comprising the steps of: applying an ultraviolet resin to the upper surface of a metal layer formed on a glass substrate, forming a micropattern on the ultraviolet resin through an imprinting process of pressing a micropattern master, and then irradiating the micropattern with ultraviolet light to cure the micropattern; performing a slope deposition process on one side surface and the upper surface of the cured micropattern to form a micropattern reinforcing part thereon; performing a first plasma etching process to remove the ultraviolet resin in an area where the micropattern reinforcing part is not formed to expose the micropattern in the vertical direction; performing a second plasma etching process to remove a metal layer in an area where the metal layer is exposed in the vertical direction; and removing the micropattern and the micropattern reinforcing part remaining on the metal layer from which the vertically exposed area has been removed.
(FR) La présente invention concerne un procédé de gravure au plasma utilisant un micromotif imprimé, le procédé comprenant les étapes consistant à: appliquer une résine ultraviolette sur la surface supérieure d'une couche métallique formée sur un substrat de verre, former un micromotif sur la résine ultraviolette par l'intermédiaire d'un processus d'impression consistant à presser un modèle de micromotif, puis irradier le micromotif avec une lumière ultraviolette pour durcir le micromotif; réaliser un processus de dépôt en pente sur une surface latérale et la surface supérieure du micromotif durci pour former une partie de renforcement de micromotif sur celle-ci; réaliser un premier processus de gravure au plasma pour retirer la résine ultraviolette dans une zone où la partie de renforcement de micromotif n'est pas formée pour exposer le micromotif dans la direction verticale; réaliser un second processus de gravure au plasma pour retirer une couche métallique dans une zone où la couche métallique est exposée dans la direction verticale; et retirer le micromotif et la partie de renforcement de micromotif restant sur la couche métallique à partir de laquelle la zone exposée verticalement a été retirée.
(KO) 본 발명은 유리 기판 상에 형성된 금속층의 상면에 자외선 레진을 도포하고 미세 패턴 마스터를 가압하는 임프린팅 공정을 수행하여 상기 자외선 레진에 미세 패턴을 형성한 후에 자외선을 조사하여 상기 미세 패턴을 경화시키는 단계, 상기 경화된 미세 패턴의 일 측면과 상면에 경사 증착 공정을 수행하여 미세 패턴 강화부를 형성하는 단계, 제 1 플라즈마 에칭 공정을 수행하여 상기 미세 패턴 중에서 상기 미세 패턴 강화부가 형성되지 않아 수직 방향으로 노출되어 있는 영역의 자외선 레진을 제거하는 단계, 제 2 플라즈마 에칭 공정을 수행하여 상기 금속층 중에서 수직 방향으로 노출되어 있는 영역의 금속층을 제거하는 단계 및 상기 수직방향으로 노출된 영역이 제거된 금속층의 상부에 잔존하는 미세 패턴 및 미세 패턴 강화부를 제거하는 단계를 포함하는 임프린트된 미세 패턴을 이용한 플라즈마 에칭 방법을 제공한다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)