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1. (WO2019026955) SPUTTERING TARGET, METHOD FOR FORMING OXIDE SEMICONDUCTOR FILM, AND BACKING PLATE
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Pub. No.: WO/2019/026955 International Application No.: PCT/JP2018/028843
Publication Date: 07.02.2019 International Filing Date: 01.08.2018
IPC:
C23C 14/34 (2006.01) ,C04B 35/453 (2006.01) ,H01L 21/363 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
01
based on oxides
453
based on zinc, tin or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
363
using physical deposition, e.g. vacuum deposition, sputtering
Applicants:
出光興産株式会社 IDEMITSU KOSAN CO.,LTD. [JP/JP]; 東京都千代田区丸の内三丁目1番1号 1-1, Marunouchi 3-chome, Chiyoda-ku, Tokyo 1008321, JP
Inventors:
海上 暁 KAIJO Akira; JP
Agent:
特許業務法人樹之下知的財産事務所 KINOSHITA & ASSOCIATES; 東京都杉並区荻窪五丁目26番13号 3階 3rd Floor, 26-13, Ogikubo 5-chome, Suginami-ku, Tokyo 1670051, JP
Priority Data:
2017-14939901.08.2017JP
Title (EN) SPUTTERING TARGET, METHOD FOR FORMING OXIDE SEMICONDUCTOR FILM, AND BACKING PLATE
(FR) CIBLE DE PULVÉRISATION, PROCÉDÉ DE FORMATION DE FILM D’OXYDE SEMI-CONDUCTEUR, ET PLAQUE DE SUPPORT
(JA) スパッタリングターゲット、酸化物半導体膜の成膜方法、およびバッキングプレート
Abstract:
(EN) Provided is a sputtering target (1) wherein a plate-shaped oxide sintered body (3) has a plurality of regions disposed in the Y-direction; the plurality of regions have end regions (7A, 7B), each of which is a region containing an end in the Y-direction, and inner regions (9A, 9B), each of which is a second region to the inside counting from the end in the Y-direction; and, when defining t1 as the plate thickness of the end region (7A, 7B), L1 as the width in the Y-direction of the end region (7A, 7B), and t2 as the plate thickness of the inner region (9A, 9B), t1, L1, and t2 satisfy formulas (1) to (4). (1): t2 > t1 (2): t1 (mm) > L1 (mm) × 0.1 + 4 (3): t1 (mm) < 9 (4): 10 < L1 (mm) < 35
(FR) La présente invention concerne une cible de pulvérisation cathodique (1) dans laquelle un corps fritté d’oxyde en forme de plaque (3) comporte une pluralité de régions disposées dans la direction Y ; la pluralité de régions ont des régions d’extrémité (7A, 7B), dont chacune est une région contenant une extrémité dans la direction Y, et des régions internes (9A, 9B), dont chacune est une deuxième région vers l’intérieur en comptant depuis l’extrémité dans la direction Y ; et, lors de la définition de t1 comme étant l’épaisseur de plaque de la région d’extrémité (7A, 7B), L1 comme étant la largeur dans la direction Y de la région d’extrémité (7A, 7B), et t2 comme étant l’épaisseur de plaque de la région interne (9A, 9B), t1, L1, et t2 satisfont aux formules (1) à (4). (1): t2 > t1 (2) : t1 (mm) > L1 (mm) × 0,1 + 4 (3) : t1 (mm) < 9 (4) : 10 < L1 (mm) < 35
(JA) 板状の酸化物焼結体(3)はY方向に配列された複数の領域を有し、複数の領域は、Y方向における端部を含む領域である端部領域(7A、7B)と、端部からY方向に向けて数えて内側に2番目の領域である内側領域(9A、9B)を有し、端部領域(7A、7B)の板厚をt、端部領域(7A、7B)のY方向の幅をL、内側領域(9A、9B)の板厚をtとした場合、t、L、tが、以下の式(1)乃至式(4)を満たす、スパッタリングターゲット(1)。 t>t ・・・(1) t(mm)>L(mm)×0.1+4・・・(2) t(mm)<9 ・・・(3) 10<L(mm)<35 ・・・(4)
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)