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1. (WO2019026885) PATTERN FORMING METHOD AND PROCESSING SOLUTION
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Pub. No.: WO/2019/026885 International Application No.: PCT/JP2018/028599
Publication Date: 07.02.2019 International Filing Date: 31.07.2018
IPC:
G03F 7/32 (2006.01) ,C08F 20/10 (2006.01) ,G03F 7/038 (2006.01) ,G03F 7/039 (2006.01) ,G03F 7/20 (2006.01) ,H01L 21/027 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26
Processing photosensitive materials; Apparatus therefor
30
Imagewise removal using liquid means
32
Liquid compositions therefor, e.g. developers
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
20
Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
02
Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10
Esters
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
038
Macromolecular compounds which are rendered insoluble or differentially wettable
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
Applicants:
JSR株式会社 JSR CORPORATION [JP/JP]; 東京都港区東新橋一丁目9番2号 9-2, Higashi-Shinbashi 1-chome, Minato-ku, Tokyo 1058640, JP
Inventors:
志水 誠 SHIMIZU,Makoto; JP
川尻 陵 KAWAJIRI,Ryo; JP
一戸 大吾 ICHINOHE,Daigo; JP
Agent:
特許業務法人 ユニアス国際特許事務所 UNIUS PATENT ATTORNEYS OFFICE; 大阪府大阪市淀川区西中島5丁目13-9 新大阪MTビル1号館2階 First Shin-Osaka MT Bldg. 2nd Floor, 5-13-9 Nishinakajima, Yodogawa-ku, Osaka-shi, Osaka 5320011, JP
Priority Data:
2017-15135404.08.2017JP
Title (EN) PATTERN FORMING METHOD AND PROCESSING SOLUTION
(FR) PROCÉDÉ DE FORMATION DE MOTIF ET SOLUTION DE TRAITEMENT
(JA) パターン形成方法及び処理液
Abstract:
(EN) Provided is a pattern forming method which exhibits various excellent properties such as good LWR, sensitivity, DOF and suppression of film thinning in a step for forming a pattern of a resist film, and which enables the formation of a resist pattern that has fewer development defects. A pattern forming method which comprises (1) a step for forming a resist film on a substrate with use of a photoresist composition, (2) a step for exposing the resist film to light, (3) a step for forming a pattern by developing the light-exposed resist film by means of a developer liquid, and (4) a step for processing the pattern by means of a processing solution. This pattern forming method is configured such that: the photoresist composition contains (A) a polymer which has a structural unit (I) containing an acid-cleavable group that is cleft by the action of an acid, and the solubility of which in the above-described developer liquid is decreased by dissociation of the acid-cleavable group, and (B) a radiation sensitive acid generator; and the processing solution has acidity.
(FR) L'invention concerne un procédé de formation de motif qui présente diverses excellentes propriétés en termes de rugosité de largeur de ligne, de profondeur de foyer et de suppression de l'amincissement de film dans une étape de formation d'un motif d'un film de photorésine. Le procédé permet la formation d'un motif de photorésine qui présente moins de défauts de développement. Le procédé de formation de motif comprend (1) une étape consistant à former un film de photorésine sur un substrat à l'aide d'une composition de résine photosensible, (2) une étape consistant à exposer le film de photorésine à de la lumière, (3) une étape consistant à former un motif en développant le film de photorésine exposé à la lumière à l'aide d'une substance développatrice, et (4) une étape consistant à traiter le motif au moyen d'une solution de traitement. Ce procédé de formation de motif est configuré de telle sorte que : la composition de résine photosensible contienne (A) un polymère qui a un motif structural (I) contenant un groupe clivable par un acide qui est fendu par l'action d'un acide, et dont la solubilité dans la substance développatrice décrite ci-dessus est diminuée par la dissociation du groupe clivable par l'acide, et (B) un générateur d'acide sensible au rayonnement ; la solution de traitement ait de l'acidité.
(JA) レジスト膜のパターン形成工程における膜減りの抑制、良好なLWR、感度、DOFといった諸性能に優れ、かつ現像欠陥の少ないレジストパターンを形成できるパターン形成方法を提供する。(1)フォトレジスト組成物を用いて基板上にレジスト膜を形成する工程、(2)上記レジスト膜を露光する工程、(3)上記露光されたレジスト膜を現像液で現像しパターンを形成する工程、及び(4)上記パターンを処理液で処理する工程を含むパターン形成方法であって、上記フォトレジスト組成物が、[A]酸の作用により解離する酸解離性基を含む構造単位(I)を有し、この酸解離性基の解離により上記現像液に対する溶解性が減少する重合体、及び[B]感放射線性酸発生体を含有し、上記処理液が酸性を示す処理液であるパターン形成方法。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)