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1. (WO2019026871) ALUMINA SINTERED COMPACT, METHOD OF MANUFACTURING SAME, AND COMPONENT FOR SEMICONDUCTOR MANUFACTURING APPARATUS
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Pub. No.: WO/2019/026871 International Application No.: PCT/JP2018/028547
Publication Date: 07.02.2019 International Filing Date: 31.07.2018
IPC:
C04B 35/117 (2006.01) ,H01L 21/3065 (2006.01)
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
01
based on oxides
10
based on aluminium oxide
111
Fine ceramics
117
Composites
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
Applicants:
株式会社フェローテックセラミックス FERROTEC CERAMICS CORPORATION [JP/JP]; 東京都中央区日本橋二丁目3番4号 3-4, Nihonbashi 2-chome, Chuo-ku, Tokyo 1030027, JP
Inventors:
衛藤 俊一 ETO, Shunichi; JP
福尾 長延 FUKUO, Osanobu; JP
齋藤 ▲精▼孝 SAITOU, Kiyotaka; JP
Agent:
特許業務法人ブライタス BRIGHTAS IP ATTORNEYS; 大阪府大阪市北区曽根崎2丁目5番10号 2-5-10, Sonezaki, Kita-ku, Osaka-shi, Osaka 5300057, JP
Priority Data:
2017-14881501.08.2017JP
Title (EN) ALUMINA SINTERED COMPACT, METHOD OF MANUFACTURING SAME, AND COMPONENT FOR SEMICONDUCTOR MANUFACTURING APPARATUS
(FR) COMPACT FRITTÉ D'ALUMINE, SON PROCÉDÉ DE FABRICATION, ET ÉLÉMENT POUR APPAREIL DE FABRICATION DE SEMI-CONDUCTEUR
(JA) アルミナ焼結体およびその製造方法、ならびに、半導体製造装置用部品
Abstract:
(EN) Provided is an alumina sintered compact containing, in terms of oxide, 0.01–1.0 mass% of at least one selected from Ta, Nb, and V. The alumina sintered compact may also contain, in terms of oxide, 0.01–1.0 mass% of Mg. The alumina sintered compact especially preferably has an alumina purity of at least 99%. As a result, an alumina sintered compact having lower dielectric loss than in the prior art can be inexpensively obtained.
(FR) L'invention concerne un compact fritté d'alumine contenant, en termes d'oxyde, 0,01 à 1,0 % en masse d'au moins un élément choisi parmi le Ta, le Nb et le V. Le compact fritté d'alumine peut également contenir, en termes d'oxyde, 0,01 à 1,0 % en masse de Mg. Le compact fritté en alumine présente notamment, de préférence, une pureté d'alumine d'au moins 99 %. En conséquence, un compact fritté d'alumine ayant une perte diélectrique plus faible que dans l'état de la technique peut être obtenu de manière peu coûteuse.
(JA) Ta、NbおよびVから選択される一種以上を、酸化物換算で0.01~1.0質量%含む、アルミナ焼結体。このアルミナ焼結体は、さらに、Mgを、酸化物換算で0.01~1.0質量%含んでもよい。このアルミナ焼結体は、特に、アルミナ純度が99%以上であることが好ましい。これにより、従来技術と比較して低い誘電損失を有するアルミナ焼結体を安価に得ることができる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)