Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019026848) PHOTOELECTRIC CONVERSION DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/026848 International Application No.: PCT/JP2018/028467
Publication Date: 07.02.2019 International Filing Date: 30.07.2018
IPC:
H01L 31/0232 (2014.01) ,G02B 5/22 (2006.01) ,H01L 27/146 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0232
Optical elements or arrangements associated with the device
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5
Optical elements other than lenses
20
Filters
22
Absorbing filters
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
Applicants:
JSR株式会社 JSR CORPORATION [JP/JP]; 東京都港区東新橋一丁目9番2号 1-9-2, Higashi-shinbashi Minato-ku, Tokyo 1058640, JP
Inventors:
三浦 拓也 MIURA Takuya; JP
一戸 大吾 ICHINOHE Daigo; JP
Agent:
特許業務法人高橋・林アンドパートナーズ TAKAHASHI, HAYASHI AND PARTNER PATENT ATTORNEYS, INC.; 東京都大田区蒲田5-24-2 損保ジャパン日本興亜蒲田ビル9階 Sonpo Japan Nipponkoa Kamata Building 9F, 5-24-2 Kamata, Ota-ku, Tokyo 1440052, JP
Priority Data:
2017-14828731.07.2017JP
Title (EN) PHOTOELECTRIC CONVERSION DEVICE
(FR) DISPOSITIF DE CONVERSION PHOTOÉLECTRIQUE
(JA) 光電変換装置
Abstract:
(EN) According to the present invention, a photoelectric conversion device (116) comprises: a photoelectric conversion element (113) that is arranged on a semiconductor substrate (112); and an optical filter (103) that is arranged on the photoelectric conversion element (113). The optical filter (103) comprises: a resin layer (102) that contains a dye having a thermal decomposition initiation temperature of 150°C or higher; and a layer (101) that protects the photoelectric conversion element. The resin layer (102) of the optical filter (103) has a dynamic hardness of from 10 mN/μm2 to 150 mN/μm2 (inclusive).
(FR) Selon la présente invention, un dispositif de conversion photoélectrique (116) comprend : un élément de conversion photoélectrique (113) qui est disposé sur un substrat semi-conducteur (112); et un filtre optique (103) qui est agencé sur l'élément de conversion photoélectrique (113). Le filtre optique (103) comprend : une couche de résine (102) qui contient un colorant ayant une température d'initiation de décomposition thermique de 150 °C au minimum; et une couche (101) qui protège l'élément de conversion photoélectrique. La couche de résine (102) du filtre optique (103) a une dureté dynamique de 10 mN/μm2 à 150 mN/μm2 (inclus).
(JA) 光電変換装置(116)は、半導体基板(112)に設けられた光電変換素子(113)と、光電変換素子(113)上に設けられた光学フィルタ(103)と、を有し、光学フィルタ(103)は、熱分解開始温度が150℃以上の色素を含有する樹脂層(102)と、光電変換素子を保護する層(101)と、を含み、光学フィルタ(103)の樹脂層(102)のダイナミック硬度は、10mN/μm以上150mN/μm以下である。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)