Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019026836) POWER MODULE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/026836 International Application No.: PCT/JP2018/028425
Publication Date: 07.02.2019 International Filing Date: 30.07.2018
IPC:
H01L 25/07 (2006.01) ,H01L 23/13 (2006.01) ,H01L 23/36 (2006.01) ,H01L 25/18 (2006.01) ,H02M 7/48 (2007.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
07
the devices being of a type provided for in group H01L29/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
12
Mountings, e.g. non-detachable insulating substrates
13
characterised by the shape
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
34
Arrangements for cooling, heating, ventilating or temperature compensation
36
Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18
the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
M
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
7
Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
42
Conversion of dc power input into ac power output without possibility of reversal
44
by static converters
48
using discharge tubes with control electrode or semiconductor devices with control electrode
Applicants:
デンカ株式会社 DENKA COMPANY LIMITED [JP/JP]; 東京都中央区日本橋室町二丁目1番1号 1-1, Nihonbashi-Muromachi 2-chome, Chuo-ku, Tokyo 1038338, JP
Inventors:
広津留 秀樹 HIROTSURU Hideki; JP
谷口 佳孝 TANIGUCHI Yoshitaka; JP
市川 恒希 ICHIKAWA Kohki; JP
酒井 篤士 SAKAI Atsushi; JP
Agent:
長谷川 芳樹 HASEGAWA Yoshiki; JP
清水 義憲 SHIMIZU Yoshinori; JP
中塚 岳 NAKATSUKA Takeshi; JP
Priority Data:
2017-15188404.08.2017JP
Title (EN) POWER MODULE
(FR) MODULE DE PUISSANCE
(JA) パワーモジュール
Abstract:
(EN) A power module 1 comprising a base plate 2, a ceramic insulating substrate 4 joined onto the base plate 2, and a semiconductor element 6 joined onto the ceramic insulating substrate 4, wherein a surface 2b of the base plate 2 on the opposite side from the ceramic insulating substrate 4 has convex warpage 2c, and the linear thermal expansion coefficient α1 (× 10 – 6/K) and the linear thermal expansion coefficient α2 (× 10 – 6/K) during a drop in temperature from 150 to 25˚C satisfy formula (1).
(FR) Selon la présente invention, un module de puissance (1) comprend une plaque de base (2), un substrat isolant céramique (4) assemblé sur la plaque de base (2), et un élément semi-conducteur (6) assemblé sur le substrat isolant céramique (4), une surface (2b) de la plaque de base (2) sur le côté opposé au substrat isolant céramique (4) présentant un gauchissement convexe (2c), et le coefficient de dilatation thermique linéaire α1 (× 10 - 6/K) et le coefficient de dilatation thermique linéaire α2 (× 10 - 6/K) pendant une chute de température de 150 à 25 °C satisfont à la formule (1). Drawing_references_to_be_translated: Nothing to translate
(JA) ベース板2と、ベース板2上に接合されたセラミックス絶縁基板4と、セラミックス絶縁基板4上に接合された半導体素子6と、を備えるパワーモジュールであって、ベース板2のセラミックス絶縁基板4と反対側の面2bが凸状の反り2cを有し、温度150℃から25℃における降温時のベース板2の線熱膨張係数α1(×10-6/K)及びセラミックス絶縁基板4の線熱膨張係数α2(×10-6/K)が下記式(1)を満たす、パワーモジュール1。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)