Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019026771) CAPACITOR
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/026771 International Application No.: PCT/JP2018/028129
Publication Date: 07.02.2019 International Filing Date: 26.07.2018
IPC:
H01G 4/30 (2006.01) ,H01G 4/33 (2006.01) ,H01L 21/318 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
G
CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
4
Fixed capacitors; Processes of their manufacture
30
Stacked capacitors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
G
CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
4
Fixed capacitors; Processes of their manufacture
33
Thin- or thick-film capacitors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
318
composed of nitrides
Applicants:
株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP/JP]; 京都府長岡京市東神足1丁目10番1号 10-1, Higashikotari 1-chome, Nagaokakyo-shi, Kyoto 6178555, JP
Inventors:
松原 弘 MATSUBARA, Hiroshi; JP
泉谷 淳子 IZUMITANI, Junko; JP
原田 真臣 HARADA, Masatomi; JP
香川 武史 KAGAWA, Takeshi; JP
Agent:
稲葉 良幸 INABA, Yoshiyuki; JP
大貫 敏史 ONUKI, Toshifumi; JP
Priority Data:
2017-14783831.07.2017JP
Title (EN) CAPACITOR
(FR) CONDENSATEUR
(JA) キャパシタ
Abstract:
(EN) Provided is a capacitor which has improved Q value in cases where a silicon nitride film is used as a dielectric film. A capacitor according to one embodiment of the present invention is provided with: a substrate; a lower electrode which is formed on the substrate; a dielectric film which is formed on the substrate or on the lower electrode; and an upper electrode which is formed on the dielectric film. The dielectric film is configured of two or more silicon nitride film layers that have different composition ratios of Si atoms to N atoms from each other; and the composition ratio of Si atoms to N atoms Si/N of the substrate-side or lower electrode-side silicon nitride film layer is higher than the Si/N composition ratio of the upper electrode-side silicon nitride film layer.
(FR) La présente invention concerne un condensateur qui présente une meilleure valeur Q dans les cas où un film de nitrure de silicium est utilisé comme film diélectrique. Un condensateur selon un mode de réalisation de la présente invention comprend : un substrat ; une électrode inférieure qui est formée sur le substrat ; un film diélectrique qui est formé sur le substrat ou sur l'électrode inférieure ; et une électrode supérieure qui est formée sur le film diélectrique. Le film diélectrique est constitué d'au moins deux couches de film de nitrure de silicium qui présentent des rapports de composition différents entre les atomes de silicium (Si) et les atomes d'azote (N) les uns des autres ; et le rapport de composition Si/N entre les atomes de silicium et les atomes d'azote de la couche de film de nitrure de silicium côté substrat ou côté électrode inférieure est supérieur au rapport de composition Si/N de la couche de film de nitrure de silicium côté électrode supérieure.
(JA) 誘電体膜としてシリコン窒化膜を用いた場合において、Q値を向上させたキャパシタを提供する。 本発明の一側面に係るキャパシタは、基板と、基板に形成された下部電極と、前記基板上又は下部電極上に形成された誘電体膜と、誘電体膜上に形成された上部電極と、を備え、誘電体膜はSi原子とN原子の組成比の異なる2層以上のシリコン窒化膜で構成され、かつ、基板側又は下部電極側のシリコン窒化膜層のSi原子とN原子の組成比率Si/Nが上部電極側のシリコン窒化膜層のSi/N組成比率よりも大きい。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)