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1. (WO2019026755) CURABLE SILICONE COMPOSITION AND OPTICAL SEMICONDUCTOR DEVICE
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Pub. No.: WO/2019/026755 International Application No.: PCT/JP2018/028079
Publication Date: 07.02.2019 International Filing Date: 26.07.2018
IPC:
C08L 83/07 (2006.01) ,C08L 83/05 (2006.01) ,C08L 83/12 (2006.01) ,H01L 23/29 (2006.01) ,H01L 23/31 (2006.01) ,H01L 33/56 (2010.01)
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
L
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
83
Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Compositions of derivatives of such polymers
04
Polysiloxanes
07
containing silicon bound to unsaturated aliphatic groups
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
L
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
83
Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Compositions of derivatives of such polymers
04
Polysiloxanes
05
containing silicon bound to hydrogen
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
L
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
83
Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Compositions of derivatives of such polymers
10
Block- or graft-copolymers containing polysiloxane sequences
12
containing polyether sequences
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
28
Encapsulation, e.g. encapsulating layers, coatings
29
characterised by the material
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
28
Encapsulation, e.g. encapsulating layers, coatings
31
characterised by the arrangement
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
52
Encapsulations
56
Materials, e.g. epoxy or silicone resin
Applicants:
東レ・ダウコーニング株式会社 DOW CORNING TORAY CO., LTD. [JP/JP]; 東京都千代田区大手町一丁目5番1号 1-5-1, Otemachi, Chiyoda-ku, Tokyo 1000004, JP
Inventors:
飯村 智浩 IIMURA, Tomohiro; JP
西嶋 一裕 NISHIJIMA, Kazuhiro; JP
稲垣 さわ子 INAGAKI, Sawako; JP
古川 晴彦 FURUKAWA, Haruhiko; JP
Priority Data:
2017-14855031.07.2017JP
Title (EN) CURABLE SILICONE COMPOSITION AND OPTICAL SEMICONDUCTOR DEVICE
(FR) COMPOSITION DE SILICONE DURCISSABLE ET DISPOSITIF OPTIQUE À SEMI-CONDUCTEUR
(JA) 硬化性シリコーン組成物、および光半導体装置
Abstract:
(EN) This curable silicone composition is characterized by comprising at least (A) an organopolysiloxane having at least two alkenyl groups in each molecule thereof, (B) an organopolysiloxane not having a polyether structure and having at least two hydrogen atoms bonded to a silicon atom in each molecule thereof, (C) a polyether-modified silicone having a siloxane dendron structure and a polyether structure, and (D) a hydrosilylation catalyst, the curable silicone composition whereby an optical semiconductor device can be formed having minimal contamination of a case during manufacturing of the optical semiconductor device, good efficiency of light extraction from a light-emitting element, and minimal color unevenness or chromaticity deviation. This optical semiconductor device is also characterized in that a light-emitting element is sealed or covered by a cured material of the composition, and by having minimal contamination of a case, good efficiency of light extraction, and minimal color unevenness or chromaticity deviation.
(FR) La présente invention concerne une composition de silicone durcissable caractérisée en ce qu'elle comprend au moins (A) un organopolysiloxane ayant au moins deux groupes alcényle dans chaque molécule, (B) un organopolysiloxane ne possédant pas de structure polyéther et ayant au moins deux atomes d'hydrogène liés à un atome de silicium dans chaque molécule, (C) une silicone modifiée par polyéther ayant une structure de dendron de siloxane et une structure de polyéther, et (D) un catalyseur d'hydrosilylation, la composition de silicone durcissable par laquelle un dispositif à semi-conducteur optique peut être formé présentant une contamination minimale d'un boîtier pendant la fabrication du dispositif à semi-conducteur optique, une bonne efficacité d'extraction de lumière à partir d'un élément électroluminescent, et une inégalité de couleur minimale ou un écart de chromaticité minimal. Ce dispositif à semi-conducteur optique est également caractérisé en ce qu'un élément électroluminescent est rendu étanche ou recouvert par un matériau durci de la composition, et en ce qu'il présente une contamination minimale d'un boîtier, une bonne efficacité d'extraction de lumière, et une inégalité de couleur minimale ou un écart de chromaticité minimal.
(JA) 本発明の硬化性シリコーン組成物は、(A)一分子中に少なくとも2個のアルケニル基を有するオルガノポリシロキサン、(B)一分子中に少なくとも2個のケイ素原子結合水素原子を有し、ポリエーテル構造を有さないオルガノポリシロキサン、(C)シロキサンデンドロン構造およびポリエーテル構造を有するポリエーテル変性シリコーン、および(D)ヒドロシリル化反応用触媒から少なくともなり、光半導体装置製造時にケースの汚染が少なく、発光素子からの光取り出し効率が良好で、色むらや色度ずれが少ない光半導体装置を形成できるという特徴がある。また、本発明の光半導体装置は、前記組成物の硬化物により発光素子が封止もしくは被覆されており、ケースの汚染が少なく、光取り出し効率が良好で、色むらや色度ずれが少ないという特徴がある。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)