Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019026752) HIGH-FREQUENCY SWITCH
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/026752 International Application No.: PCT/JP2018/028071
Publication Date: 07.02.2019 International Filing Date: 26.07.2018
IPC:
H01L 21/822 (2006.01) ,H01L 27/04 (2006.01) ,H01P 1/15 (2006.01) ,H03K 17/62 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
P
WAVEGUIDES; RESONATORS, LINES OR OTHER DEVICES OF THE WAVEGUIDE TYPE
1
Auxiliary devices
10
for switching or interrupting
15
by semiconductor devices
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
51
characterised by the use of specified components
56
by the use, as active elements, of semiconductor devices
60
the devices being bipolar transistors
62
Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
Applicants:
株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP/JP]; 京都府長岡京市東神足1丁目10番1号 10-1, Higashikotari 1-chome, Nagaokakyo-shi, Kyoto 6178555, JP
Inventors:
関 健太 SEKI Kenta; JP
Agent:
特許業務法人 楓国際特許事務所 KAEDE PATENT ATTORNEYS' OFFICE; 大阪府大阪市中央区農人橋1丁目4番34号 1-4-34, Noninbashi, Chuo-ku, Osaka-shi, Osaka 5400011, JP
Priority Data:
2017-14875501.08.2017JP
Title (EN) HIGH-FREQUENCY SWITCH
(FR) COMMUTATEUR HAUTE FRÉQUENCE
(JA) 高周波スイッチ
Abstract:
(EN) Provided is a high-frequency switch in which the length of a section in which a travel direction of power from an input/output terminal (P251) to a common terminal (P20) and a travel direction of power from the common terminal (P20) to an external connection terminal (P10) are opposite is greater than the length of a section in which a travel direction of power from an input/output terminal (P211) to the common terminal (P20) and a travel direction of power from the common terminal (P20) to the external connection terminal (P10) are opposite. An FET (251) and an FET (211) have a structure such that power transmitted between the drain and source of the FET (251) due to a predetermined input power is greater than power transmitted between the drain and source of the FET (211).
(FR) L'invention concerne un commutateur haute fréquence dans lequel la longueur d'une section, dans laquelle le sens de déplacement du courant électrique à partir d'une borne d'entrée/sortie (P251) vers une borne commune (P20) et le sens de déplacement du courant électrique à partir de la borne commune (P20) vers une borne de connexion externe (P10) sont opposés, est supérieure à la longueur d'une section dans laquelle le sens de déplacement du courant électrique à partir d'une borne d'entrée/sortie (P211) vers la borne commune (P20) et le sens de déplacement du courant électrique à partir de la borne commune (P20) vers la borne de connexion externe (P10) sont opposés. Un TEC (251) et un autre TEC (211) présentent une structure telle que la puissance transmise entre le drain et la source du TEC (251) en raison de l'application d'une puissance d'entrée prédéfinie, est supérieure à la puissance transmise entre le drain et la source du TEC (211).
(JA) 入出力端子(P251)から共通端子(P20)への電力の進行方向と、共通端子(P20)から外部接続端子(P10)への電力の進行方向とが逆方向となる区間の長さは、入出力端子(P211)から共通端子(P20)への電力の進行方向と、共通端子(P20)から外部接続端子(P10)への電力の進行方向とが逆方向となる区間の長さよりも長い。FET(251)とFET(211)は、所定の入力電力によるFET(251)のドレインソース間を伝送する電力がFET(211)のドレインソース間を伝送する電力よりも大きくなる構造を有する。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)