Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019026677) LIQUID COMPOSITION FOR REDUCING DAMAGE OF COBALT, ALUMINA, INTERLAYER INSULATING FILM AND SILICON NITRIDE, AND WASHING METHOD USING SAME
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/026677 International Application No.: PCT/JP2018/027592
Publication Date: 07.02.2019 International Filing Date: 24.07.2018
IPC:
H01L 21/304 (2006.01) ,C11D 7/08 (2006.01) ,C11D 7/32 (2006.01) ,C11D 7/50 (2006.01) ,C11D 17/08 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
C CHEMISTRY; METALLURGY
11
ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
D
DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
7
Compositions of detergents based essentially on non-surface-active compounds
02
Inorganic compounds
04
Water-soluble compounds
08
Acids
C CHEMISTRY; METALLURGY
11
ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
D
DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
7
Compositions of detergents based essentially on non-surface-active compounds
22
Organic compounds
32
containing nitrogen
C CHEMISTRY; METALLURGY
11
ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
D
DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
7
Compositions of detergents based essentially on non-surface-active compounds
50
Solvents
C CHEMISTRY; METALLURGY
11
ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
D
DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
17
Detergent materials or soaps characterised by their shape or physical properties
08
Liquid soap; capsuled
Applicants:
三菱瓦斯化学株式会社 MITSUBISHI GAS CHEMICAL COMPANY, INC. [JP/JP]; 東京都千代田区丸の内二丁目5番2号 5-2, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008324, JP
Inventors:
尾家 俊行 OIE Toshiyuki; JP
プトラ プリアンガ プルダナ PUTRA Priangga Perdana; JP
堀田 明伸 HORITA Akinobu; JP
Agent:
小林 浩 KOBAYASHI Hiroshi; JP
杉山 共永 SUGIYAMA Tomohisa; JP
田村 恭子 TAMURA Kyoko; JP
鈴木 康仁 SUZUKI Yasuhito; JP
Priority Data:
2017-14839631.07.2017JP
Title (EN) LIQUID COMPOSITION FOR REDUCING DAMAGE OF COBALT, ALUMINA, INTERLAYER INSULATING FILM AND SILICON NITRIDE, AND WASHING METHOD USING SAME
(FR) COMPOSITION LIQUIDE POUR RÉDUIRE LES DOMMAGES CAUSÉS PAR LE COBALT, L'ALUMINE, LE FILM ISOLANT INTERCOUCHE ET LE NITRURE DE SILICIUM, ET PROCÉDÉ DE LAVAGE L'UTILISANT
(JA) コバルト、アルミナ、層間絶縁膜、窒化シリコンのダメージを抑制した組成液及びこれを用いた洗浄方法
Abstract:
(EN) The present invention relates to: a liquid composition suitable for the washing of a semiconductor element provided with a low-dielectric-constant interlayer insulating film; and a method for washing a semiconductor element. The liquid composition according to the present invention is characterized by containing tetrafluoroboric acid (A) in an amount of 0.01 to 30% by mass or boric acid (B1) and hydrogen fluoride (B2) at a (boric acid)/(hydrogen fluoride) ratio of (0.0001 to 5.0% by mass)/(0.005 to 5.0% by mass) and having a pH value of 0.0 to 4.0. The liquid composition according to the present invention can reduce the damage of a low-dielectric-constant interlayer insulating film, cobalt or a cobalt alloy, alumina, a zirconia-based hard mask and a silicon nitride during the process of producing a semiconductor integrated circuit, and accordingly can be used suitablely for removing dry etching residues occurring on the surface of the semiconductor integrated circuit.
(FR) La présente invention concerne : une composition liquide appropriée pour le lavage d'un élément semi-conducteur comprenant un film isolant intercouche à faible constante diélectrique; et un procédé de lavage d'un élément semi-conducteur. La composition liquide selon la présente invention est caractérisée en ce qu'elle contient de l'acide tétrafluoroborique (A) en une quantité de 0,01 à 30 % en masse ou de l'acide borique (B1) et du fluorure d'hydrogène (B2) à un rapport (acide borique)/ (fluorure d'hydrogène) de (0,0001 à 5,0 % en masse)/ (0,005 à 5,0 % en masse) et ayant une valeur de pH de 0,0 à 4,0. La composition liquide selon la présente invention peut réduire les dommages d'un film isolant intercouche à faible constante diélectrique, de cobalt ou d'un alliage de cobalt, d'alumine, un masque dur à base de zircone et un nitrure de silicium pendant le processus de production d'un circuit intégré à semi-conducteur, et peut par conséquent être utilisé de manière appropriée pour enlever des résidus de gravure sèche se produisant sur la surface du circuit intégré à semi-conducteur.
(JA) 本発明は、低誘電率層間絶縁膜を有する半導体素子の洗浄に適した組成液及び半導体素子の洗浄方法に関する。本発明の組成液は、テトラフルオロホウ酸(A)を0.01~30質量%、又はホウ酸(B1)及びフッ化水素(B2)を(ホウ酸/フッ化水素)=(0.0001~5.0質量%/0.005~5.0質量%)で含有し、pHが0.0~4.0の範囲にあることを特徴とする。本発明の組成液は、半導体集積回路の製造工程において低誘電率層間絶縁膜、コバルトまたはコバルト合金、アルミナ、ジルコニア系ハードマスク、窒化シリコンのダメージを抑制し、半導体集積回路の表面に存在するドライエッチング残渣を除去するために好適に用いられる。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)