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1. (WO2019026641) THIN-FILM CAPACITOR AND PRODUCTION METHOD FOR SAME
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Pub. No.: WO/2019/026641 International Application No.: PCT/JP2018/027209
Publication Date: 07.02.2019 International Filing Date: 20.07.2018
IPC:
H01L 21/822 (2006.01) ,H01G 4/30 (2006.01) ,H01G 4/33 (2006.01) ,H01L 27/04 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
G
CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
4
Fixed capacitors; Processes of their manufacture
30
Stacked capacitors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
G
CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
4
Fixed capacitors; Processes of their manufacture
33
Thin- or thick-film capacitors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
Applicants:
株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP/JP]; 京都府長岡京市東神足1丁目10番1号 10-1, Higashikotari 1-chome, Nagaokakyo-shi, Kyoto 6178555, JP
Inventors:
香川 武史 KAGAWA, Takeshi; JP
泉谷 淳子 IZUMITANI, Junko; JP
原田 真臣 HARADA, Masatomi; JP
松原 弘 MATSUBARA, Hiroshi; JP
石田 宣博 ISHIDA, Nobuhiro; JP
Agent:
稲葉 良幸 INABA, Yoshiyuki; JP
大貫 敏史 ONUKI, Toshifumi; JP
Priority Data:
2017-14833031.07.2017JP
Title (EN) THIN-FILM CAPACITOR AND PRODUCTION METHOD FOR SAME
(FR) CONDENSATEUR À FILM MINCE ET SON PROCÉDÉ DE PRODUCTION
(JA) 薄膜コンデンサ及びその製造方法
Abstract:
(EN) A thin-film capacitor (100) comprising: a lower electrode (120); a dielectric film (130); an upper electrode (140); a first protection film (151) that has formed therein a first through-hole (CH11) opening to the upper electrode (140) and a second through-hole (CH12) opening to the lower electrode (120), and that has a first upper surface (150A); a second protection film (152) that has a second upper surface (150B) provided at a higher position than the first upper surface 150A of the first protection film 151; a first terminal electrode (161) that is electrically connected to the upper electrode (140) via the first through-hole (CH11), and that is provided so as to extend at least to the second upper surface (150B) of the second protection film (152); and a second terminal electrode (162) that is electrically connected to the lower electrode (120) via the second through-hole (CH12), and that is provided so as to extend at least to the second upper surface (150B) of the second protection film (152).
(FR) L'invention concerne un condensateur à film mince (100) comprenant : une électrode inférieure (120); un film diélectrique (130); une électrode supérieure (140); un premier film de protection (151) à l’intérieur duquel est formé un premier trou traversant (CH11) s'ouvrant sur l'électrode supérieure (140) et un second trou traversant (CH12) s'ouvrant sur l'électrode inférieure (120), et qui a une première surface supérieure (150A); un second film de protection (152) qui a une seconde surface supérieure (150B) disposée à une position supérieure à la première surface supérieure 150A du premier film de protection 151; une première électrode de borne (161) qui est électroconnectée à l'électrode supérieure (140) par l'intermédiaire du premier trou traversant (CH11), et qui est disposée de façon à s'étendre au moins jusqu'à la seconde surface supérieure (150B) du second film de protection (152); et une seconde électrode de borne (162) qui est électroconnectée à l'électrode inférieure (120) par l'intermédiaire du second trou traversant (CH12), et qui est disposée de façon à s'étendre au moins jusqu'à la seconde surface supérieure (150B) du second film de protection (152).
(JA) 薄膜コンデンサ(100)は、下部電極(120)と、誘電体膜(130)と、上部電極(140)と、上部電極(140)を開口する第1貫通孔(CH11)及び下部電極(120)を開口する第2貫通孔(CH12)がそれぞれ形成され且つ第1上面(150A)を有する第1保護膜(151)と、第1保護膜151の第1上面150Aよりも高い位置にある第2上面(150B)を有する第2保護膜(152)と、第1貫通孔(CH11)を通して上部電極(140)に電気的に接続され、少なくとも第2保護膜(152)の第2上面(150B)に至るように延在して設けられた第1端子電極(161)と、第2貫通孔(CH12)を通して下部電極(120)に電気的に接続され、少なくとも第2保護膜(152)の第2上面(150B)に至るように延在して設けられた第2端子電極(162)とを備えている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)