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1. (WO2019026632) SOLID-STATE IMAGE CAPTURE ELEMENT AND IMAGE CAPTURE DEVICE
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Pub. No.: WO/2019/026632 International Application No.: PCT/JP2018/027033
Publication Date: 07.02.2019 International Filing Date: 19.07.2018
IPC:
H04N 5/374 (2011.01) ,H04N 5/361 (2011.01) ,H04N 5/378 (2011.01)
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
374
Addressed sensors, e.g. MOS or CMOS sensors
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
357
Noise processing, e.g. detecting, correcting, reducing or removing noise
361
applied to dark current
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
378
Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
Applicants:
ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP/JP]; 神奈川県厚木市旭町四丁目14番1号 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa 2430014, JP
Inventors:
佐藤 守 SATO Mamoru; JP
Agent:
西川 孝 NISHIKAWA Takashi; JP
稲本 義雄 INAMOTO Yoshio; JP
Priority Data:
2017-14968702.08.2017JP
Title (EN) SOLID-STATE IMAGE CAPTURE ELEMENT AND IMAGE CAPTURE DEVICE
(FR) ÉLÉMENT DE CAPTURE D'IMAGE À SEMI-CONDUCTEURS ET DISPOSITIF DE CAPTURE D'IMAGE
(JA) 固体撮像素子および撮像装置
Abstract:
(EN) The present technology relates to a solid-state image capture element and an image capture device with which a sufficient dynamic range can be ensured. The solid-state image capture element is provided with: a pixel array unit which includes a read pixel from which a pixel signal corresponding to a light amount of incident light is to be read, and a reference pixel having a characteristic equivalent to that of the read pixel; and a read load unit which forms a differential amplification circuit with the read pixel and the reference pixel, and which, by inputting a pseudo-dark current signal corresponding to a dark current signal generated in the read pixel into the reference pixel, cancels the dark current signal. The present technology may be applied in a CMOS image sensor, for example.
(FR) La présente invention concerne un élément de capture d'image à semi-conducteurs et un dispositif de capture d'image qui permettent d'assurer une plage dynamique suffisante. L'élément de capture d'image à semi-conducteurs est pourvu : d'une unité de réseau de pixels qui comprend un pixel de lecture à partir duquel un signal de pixel correspondant à une quantité de lumière incidente doit être lu, et un pixel de référence ayant une caractéristique équivalente à celle du pixel de lecture; d'une unité de charge de lecture qui forme un circuit d'amplification différentiel avec le pixel de lecture et le pixel de référence, et qui, en entrant un pseudo signal de courant d'obscurité correspondant à un signal de courant d'obscurité généré dans le pixel de lecture vers le pixel de référence, annule le signal de courant d'obscurité. La présente technologie peut par exemple être appliquée à un capteur d'image CMOS.
(JA) 本技術は、十分なダイナミックレンジを確保することができるようにする固体撮像素子および撮像装置に関する。 固体撮像素子は、入射した光の光量に応じた画素信号の読み出し対象となる読み出し画素、および読み出し画素と同等の特性を有する参照画素を有する画素アレイ部と、読み出し画素および参照画素とともに差動増幅回路を形成し、読み出し画素において発生する暗電流信号に対応する疑似暗電流信号を参照画素に入力することで、暗電流信号をキャンセルする読出し負荷部とを備える。本技術はCMOSイメージセンサに適用することができる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)